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1N4750 PDF预览

1N4750

更新时间: 2024-11-20 20:25:11
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
3页 1744K
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1N4750 技术参数

Case Style:DO-41Pd(W):1
VZ(Min):-VZ(Nom):27
VZ(Max):-IZT(mA):9.5
IR(uA):5.0VR(V):20.6
class:Diodes

1N4750 数据手册

 浏览型号1N4750的Datasheet PDF文件第2页浏览型号1N4750的Datasheet PDF文件第3页 
1N4728-1N4764  
Zener Diodes  
POWER DISSIPATION: 1.0 W  
DO-41  
Features  
Silicon planar power zener diodes  
For use in stabilizing and clipping circuits with high  
power rating.  
Standard zener voltage tolerance is ±10%. Add  
suffix "A" for ±5% tolerance. other zener voltage  
and tolerances are available upon request.  
Mechanical Data  
Case:DO-41  
Terminals: solderable per MIL-STD-202, method 208  
Polarity: cathode band  
Marking: type number  
Approx. weight: 0.35 grams.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
VALUE  
UNIT  
Zener current (see Table "Characteristics")  
Pow er dissipation @ Tamb 50  
Z-current  
1.01)  
PV/VZ  
PDiss  
W
IZ  
mA  
Junction temperature  
TJ  
200  
Storage temperature range  
Junction ambient I=9.5mm(3/8 ), TL=constant  
Ts  
-55---+200  
100  
RThJA  
K/W  
SYMBOL  
VF  
MIN  
TYP  
MAX  
1.2  
UNIT  
Forw ard voltage at IF=200mA  
V
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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