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1N4730AAMO PDF预览

1N4730AAMO

更新时间: 2024-11-08 12:58:03
品牌 Logo 应用领域
恩智浦 - NXP 稳压二极管测试
页数 文件大小 规格书
6页 31K
描述
DIODE 3.9 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

1N4730AAMO 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.03
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:1 W
认证状态:Not Qualified标称参考电压:3.9 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
最大电压容差:5%工作测试电流:64 mA
Base Number Matches:1

1N4730AAMO 数据手册

 浏览型号1N4730AAMO的Datasheet PDF文件第2页浏览型号1N4730AAMO的Datasheet PDF文件第3页浏览型号1N4730AAMO的Datasheet PDF文件第4页浏览型号1N4730AAMO的Datasheet PDF文件第5页浏览型号1N4730AAMO的Datasheet PDF文件第6页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
1N4728A to 1N4749A  
Voltage regulator diodes  
1996 Apr 26  
Product specification  
Supersedes data of April 1992  

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