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1N4729 PDF预览

1N4729

更新时间: 2024-11-15 22:52:11
品牌 Logo 应用领域
EIC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
2页 31K
描述
SILICON ZENER DIODES

1N4729 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.58
Is Samacsys:N配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:10 Ω
元件数量:1最高工作温度:175 °C
最大功率耗散:1 W标称参考电压:3.6 V
子类别:Voltage Reference Diodes表面贴装:NO
最大电压容差:10%工作测试电流:69 mA
Base Number Matches:1

1N4729 数据手册

 浏览型号1N4729的Datasheet PDF文件第2页 
SILICON ZENER DIODES  
1N4728 - 1N4764  
Z1110 - Z1200  
DO - 41  
Z
V : 3.3 - 200 Volts  
D
P : 1 Watt  
1.00 (25.4)  
FEATURES :  
0.107 (2.7)  
MIN.  
* Complete voltage range 3.3 to 200 Volts  
0.080 (2.0)  
* High peak reverse power dissipation  
* High reliability  
* Low leakage current  
0.205 (5.2)  
0.166 (4.2)  
MECHANICAL DATA  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
0.028 (0.71)  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.339 gram  
MAXIMUM RATINGS  
Rating at 25 C ambient temperature unless otherw ise specified  
°
Rating  
Symbol  
Value  
Unit  
DC Power Dissipation at TL = 50 C (Note1)  
PD  
1.0  
Watt  
°
Maximum Forward Voltage at IF = 200 mA  
Maximum Thermal Resistance Junction to Ambient Air (Note2)  
Junction Temperature Range  
VF  
1.2  
Volts  
K / W  
R JA  
q
170  
TJ  
- 55 to + 175  
- 55 to + 175  
C
C
°
°
Storage Temperature Range  
Ts  
Note :  
(1) TL = Lead temperature at 3/8 " (9.5mm) from body  
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.  
Fig. 1 POWER TEMPERATURE DERATING CURVE  
1.25  
1.00  
0.75  
0.50  
L = 3/8" (9.5mm)  
0.25  
0
25  
50  
75  
100  
125  
150  
175  
TL, LEAD TEMPERATURE ( C)  
°
UPDATE : SEPTEMBER 9, 2000  

1N4729 替代型号

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Zener Diode, 3.6V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, PLASTIC PA
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