1N4607-TR

更新时间： 2024-02-27 22:04:30

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管开关
页数	文件大小	规格书
4页	239K
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1N4607-TR 数据手册

Silicon Switching Diode

DO-35 Glass Package

1N4607

1N4150

Applications

Used in general purpose applications,where a controlled forward

characteristic and fast switching speed are important.

DO-35 Glass Package

Features

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Six sigma quality

Metallurgically bonded

BKC's Sigma Bond™ plating

for problem free solderability

Dia.

0.06-0.09"

1.0"

25.4 mm

(Min.)

Length

0.120-.200"

3.05-5.08- mm

1.53-2.28 mm

Maximum Ratings

Symbol

Value

85 (Min).

200

Unit

Peak Inverse Voltage @ 5µA & 0.1µA @ -55^oC

PIV

Iavg

I_Fdc

Volts

AverageRectifiedCurrent

mAmps

Amp

Continuous Forward Current

200

Peak Surge Current (t_peak= 1 sec.)

BKC Power Dissipation T_L=50 ^oC, L = 3/8" from body

Operating Temperature Range

I_peak

P_tot

1.0

500

mWatts

^oC

T_Op

-65 to +200

Storage Temperature Range

Electrical Characteristics @ 25^oC*

T_St

-65 to +200

Maximum

1.10

^oC

Symbol

Minimum

Unit

Forward Voltage Drop @ I_F= 400 mA

V_F

***

Volts

Breakdown Voltage @ I_R= 25 µA

PIV

Volts

µA

Reverse Leakage Current @ V_R= 50 V

Reverse Recovery time (note 1)

I_R

100

t_rr

nSecs

Note 1: Per Method 4031-A with I_F= 10 mA,Vr = 6 V, R_L= 100 Ohms. * UNLESS OTHERWISE SPECIFIED

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

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