Datasheet > 1N4585GP-HE3

1N4585GP-HE3

更新时间： 2024-11-16 09:27:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	327K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Signal Diode

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数据手册

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1N4585GP-HE3 数据手册

1N4383GP thru 1N4385GP

1N4585GP & 1N4586GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1.0 A

200 V to 1000 V

50 A

5.0 µA

V_F

1.0 V

T_jmax.

175 °C

DO-204AC (DO-15)

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

application

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP Unit

* Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

1.0

800

560

800

1000

700

* Maximum RMS voltage

* Maximum DC blocking voltage

1000

* Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 100 °C

I_F(AV)

* Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

Maximum full load reverse current, full cycle average I_R(AV)

0.375"(9.5 mm) lead length at T_A= 100 °C

275

250

225

200

µA

* Operating junction and storage temperature range T_J, T_STG

- 65 to + 175

°C

Document Number 88507

14-Oct-05

www.vishay.com

12 3 4

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与1N4585GP-HE3相关器件

型号	品牌	获取价格	描述	数据表
1N4585LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
1N4585TR	CENTRAL	获取价格	暂无描述
1N4586	CENTRAL	获取价格	1.0 AMP RECTIFIER 200 THRU 1000 VOLTS
1N4586	NJSEMI	获取价格	Diode Switching 1KV 1A 2-Pin DO-41
1N4586BK	CENTRAL	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41
1N4586GP	NJSEMI	获取价格	MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
1N4586GP	VISHAY	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER
1N4586GP/100	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N4586GP/100-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N4586GP/4E	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN