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1N4585GP-E3/58 PDF预览

1N4585GP-E3/58

更新时间: 2024-11-16 05:29:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 327K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

1N4585GP-E3/58 数据手册

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1N4383GP thru 1N4385GP  
1N4585GP & 1N4586GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
200 V to 1000 V  
50 A  
5.0 µA  
*
d
e
t
VF  
1.0 V  
n
e
t
a
Tj max.  
175 °C  
P
DO-204AC (DO-15)  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP Unit  
* Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
1.0  
800  
560  
800  
1000  
700  
V
V
V
A
* Maximum RMS voltage  
* Maximum DC blocking voltage  
1000  
* Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 100 °C  
IF(AV)  
* Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
50  
A
Maximum full load reverse current, full cycle average IR(AV)  
0.375"(9.5 mm) lead length at TA = 100 °C  
275  
250  
225  
200  
200  
µA  
* Operating junction and storage temperature range TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88507  
14-Oct-05  
www.vishay.com  
1

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