Datasheet > 1N4248GP/66

1N4248GP/66

更新时间： 2024-11-30 04:15:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	328K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4248GP/66 数据手册

1N4245GP thru 1N4249GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1.0 A

200 V to 1000 V

25 A

1.0 µA

V_F

1.2 V

T_jmax.

175 °C

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602,

DO-204AL (DO-41)

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

application

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP

Unit

* Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

1.0

800

560

800

1000

700

* Maximum RMS voltage

* Maximum DC blocking voltage

1000

* Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

* Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

* Maximum full load reverse current, full cycle

average 0.375" (9.5 mm) lead length at T_A= 55 °C

I_R(AV)

µA

* Operating junction temperature range

* Storage temperature range

T_J

- 65 to + 160

- 65 to + 175

°C

T_STG

Document Number 88506

14-Sep-05

www.vishay.com

12 3 4

中文翻译

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与1N4248GP/66相关器件

型号	品牌	获取价格	描述	数据表
1N4248GP/72	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4248GP/74	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4248GP/91	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4248GP/93	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4248GPE	VISHAY	获取价格	暂无描述
1N4248GP-E3/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, D
1N4248GP-HE3/54	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N4248GP-HE3/73	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N4248LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, GPR-1A, 2 PIN
1N4248R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon,

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