5秒后页面跳转
1N4154_09 PDF预览

1N4154_09

更新时间: 2022-05-19 23:51:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 162K
描述
High Conductance Fast Diode

1N4154_09 数据手册

 浏览型号1N4154_09的Datasheet PDF文件第1页浏览型号1N4154_09的Datasheet PDF文件第3页 
Electrical Characteristics T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Breakdown Voltage  
Conditions  
Min.  
Max  
Units  
B
I = 5.0µA  
R
35  
V
V
I
Reverse Leakage  
V = 25V  
R
V = 25V, T = 150°C  
100  
100  
nA  
µA  
R
R
A
V
Forward Voltage  
Capacitance  
I = 30mA  
F
1.0  
4.0  
4.0  
V
F
C
V = 0, f = 1.0MHz  
R
pF  
ns  
T
T
Reverse Recovery Time  
I = 10mA, V = 6.0V  
F
RR  
R
= 1.0mA, R = 100Ω  
I
RR  
L
Physical Dimensions ( DO-35 )  
© 2009 Fairchild Semiconductor Corporation  
1N4154 Rev. B0  
www.fairchildsemi.com  
2

与1N4154_09相关器件

型号 品牌 描述 获取价格 数据表
1N4154_12 VISHAY Small Signal Fast Switching Diodes

获取价格

1N4154-13 DIODES Rectifier Diode, 1 Element, 0.15A, 25V V(RRM), Silicon, DO-35,

获取价格

1N4154-1E3 MICROSEMI Rectifier Diode, 1 Element, 0.2A, 35V V(RRM), Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC

获取价格

1N4154-A DIODES Rectifier Diode, 1 Element, Silicon

获取价格

1N4154-AP MCC Rectifier Diode, 1 Element, 0.15A, 35V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2

获取价格

1N4154-B DIODES Rectifier Diode, 1 Element, Silicon

获取价格