Datasheet > 1N4007

1N4007

更新时间： 2024-09-15 07:21:03

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	103K
描述
General Purpose Rectifier 1.0A

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1N4007 数据手册

1N4007

Naina Semiconductor Ltd.

General Purpose Rectifier, 1.0A

Features

•

Diffused junction

High efficiency

Low forward voltage drop

Low power loss

High surge current capability

Mechanical Characteristics

•

Case: Molded Plastic

Cathode indicated by Polarity band

Mounting position: Any

Terminals: Finish Tin plated, Solderable per

MIL-STD-202, Method 208

DO-41

•

Weight: 0.33 grams (approx.)

Maximum Ratings (T_A= 25⁰C unless otherwise specified)

Parameter

Symbol

V_RRM

V_RMS

V_DC

MUR420

1000

700

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward output current @ T_A= 50⁰C

1000

1.0

I_F(AV)

Peak forward surge current (8.3ms) single half sine-wave

superimposed on rated load

I_FSM

Electrical Characteristics (T_A= 25⁰C unless otherwise specified)

Parameters

Symbol

MUR420

1.0

Units

Maximum DC forward voltage drop @ 1.0A DC

V_F

T_A= 25⁰C

T_A= 100⁰C

5.0

Maximum DC reverse current @ rated DC blocking

voltage

I_R

µA

Rating for fusing (t < 8.3ms)

I²t

3.7

A²sec

Thermal and Mechanical Specifications (T_A= 25⁰C unless otherwise specified)

Parameters

Symbol

R_θJA

Values

Units

⁰C/W

⁰C

Typical thermal resistance, junction to ambient

Operating and Storage temperature range

- 65 to + 150

T_J

T_Stg

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

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1N4007/53	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4007/60	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4007/65	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN