1N4007A-G

更新时间： 2024-02-19 12:08:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	36K
描述
Rectifier Diode,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N4007A-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.58
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED

1N4007A-G 数据手册

GGeenneerraall PPuurrppoossee PPllaassttiicc RReeccttiiffiieerr

CCOOMMCCHHIIPP

www.comchiptech.com

1N4001 thru 1N4007

Reverse Voltage: 50 to 1000V

Forward Current: 1.0A

DO-41

Features

- Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

- Low reverse leakage

1.0 (25.4)

Min.

- High forward surge capability

0.107 (2.7)

0.080 (2.0)

Dia.

- High temperature soldering guaranteed: 350°C/10

Seconds, 0.375" (9.5mm) lead length

- Guardring for overvoltage protection

0.205 (5.2)

0.160 (4.1)

Mechanical Data

- Case: JEDEC DO-41 molded plastic body

- Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

1.0 (25.4)

Min.

- Polarity: Color band denotes cathode end

- Mounting Position: Any

0.034 (0.86)

0.028 (0.71)

Dia.

- Weight: 0.012 oz., 0.3 g

- Weight: 0.34 g

Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symb.

Unit

4001 4002 4003 4004 4005 4006 4007

Maximum repetitive peak reverse voltage

* Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

* Maximum DC blocking voltage

100

* Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A= 75°C

I_F(AV)

I_FSM

1.0

* Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method) T_A= 75°C

* Maximum full load reverse current, full cycle

average 0.375" (9.5mm) lead length T_L= 75°C

I_R(AV)

µA

R_θJA

R_θJL

Typical thermal resistance⁽¹⁾

°C/W

* Maximum DC blocking voltage temperature

T_A

+150

* Operating junction and storage temperature range

T_J, T_STG

–50 to +175

°C

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Maximum instantaneous forward voltage at 1.0A

V_F

1.1

* Maximum DC reverse current

at rated DC blocking voltage

T_A= 25°C

T_A= 125°C

5.0

I_R

µA

Typical junction capacitance at 4.0V, 1MHz

C_J

Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

*JEDEC registered values

Page 1

MDS0312002A

下载PDF

与1N4007A-G相关器件

型号	品牌	描述	获取价格	数据表
1N4007-AP	MCC	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACK	获取价格
1N4007-AP-HF	MCC	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41,	获取价格
1N4007-B	RECTRON	SILICON RECTIFIER	获取价格
1N4007-B	DIODES	1.0A RECTIFIER	获取价格
1N4007-BC02	MCC	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, DO-41, 2 PIN	获取价格
1N4007-BC02-BP	MCC	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, DO-41, 2 PIN	获取价格