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1N4007

更新时间: 2024-01-29 05:56:33
品牌 Logo 应用领域
戈采 - FCI 二极管
页数 文件大小 规格书
1页 56K
描述
1.0 Amp MINIATURE PLASTIC SILICON RECTIFIERS

1N4007 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.58
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIED

1N4007 数据手册

  
Data Sheet  
250 mW EPITAXIAL  
PLANAR DIODES  
Mechanical Dimensions  
Description  
JEDEC  
D0-3
.120  
.200  
1.00 Min.  
.060  
.090  
.018  
.022  
Features  
n INDUSTRY STANDARD D0-35  
n PLANAR PROCESS  
n 250 mW POWER DISSIPATION  
PACKAGE  
n MEETS UL SPECIFICATION 94V-0  
1N914  
Units  
1N914  
Maximum Ratings  
80  
Peak Reverse Voltage...VRM  
Volts  
Volts  
RMS Reverse Voltage...VR(rms)  
80  
Average Forward Rectified Current...IO  
Non-Repetitive Peak Forward Surge Current...IFSM  
Power Dissipation...PD  
mAmps  
mAmps  
mW  
............................................. 100 ...............................................  
............................................. 300 ...............................................  
............................................. 250 ...............................................  
......................................... -25 to 85 ..........................................  
......................................... -55 to 125 ..........................................  
Operating Temperature Range...TJ  
Storage Temperature Range...TSTRG  
°C  
°C  
Electrical Characteristics  
Maximum Forward Voltage...VF  
@ IF = 100 mA  
............................................. 1.2 ............................................... Volts  
Maximum DC Reverse Current...IR @ VR = 70v  
Maximum Frequency ...f  
µAmps  
............................................. 0.1 ...............................................  
............................................. 100 ............................................... MHz  
Maximum Diode Capacitance, VR = 6V, f = 1MHz...CD  
Maximum Reverse Recovery Time...tRR  
............................................. 3.5 ...............................................  
............................................. 4.0 ...............................................  
pF  
ns  
Device Under Test  
.01 uF  
Output  
0.1 IR  
PVV = 100nS  
Trr  
IF  
5K Ohms  
IR  
50 Ohms  
RG = 50 Ohms  
Page 8-2  

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