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1N4006GP/91 PDF预览

1N4006GP/91

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 329K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N4006GP/91 数据手册

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1N4001GP thru 1N4007GP  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
Test condition Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit  
at 1.0 A  
VF  
1.1  
V
instantaneous  
forward voltage  
* Maximum DC  
reverse current  
at rated DC  
T A= 2 5 ° C  
TA = 125 °C  
IR  
5.0  
50  
µA  
blocking voltage  
Typical reverse at IF = 0.5 A,  
trr  
2.0  
8.0  
µs  
pF  
recovery time  
IR = 1.0 A,  
Irr = 0.25 A  
Typical junction at 4.0 V, 1 MHz  
capacitance  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit  
Typical thermal resistance (1)  
RθJA  
RθJL  
55  
25  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
* JEDEC registered values  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.0  
0.8  
0.6  
0.4  
0.2  
0
30  
25  
20  
15  
10  
5.0  
60 Hz  
Resistive or  
Inductive Load  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
0.375" (9.5mm)  
Lead Length  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88504  
14-Sep-05  
2

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