Datasheet > 1N4006GP/62

1N4006GP/62

更新时间： 2022-12-01 23:52:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	329K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4006GP/62 数据手册

1N4001GP thru 1N4007GP

Vishay General Semiconductor

TJ = 25 °C

f = 1.0 MHz

V^sig= 50mVp-p

0.1

TJ = 25 °C

Pulse Width = 300 µs

1% Duty Cycle

0.1

0.01

100

0.6

0.8

1.0

1.2

1.4

1.6

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

100

TJ = 100 °C

0.1

T^J= 25 °C

0.01

0.1

0.01

100

0.1

100

eak Reverse Voltage (

Percent of Rated P

t - Pulse Duration (sec.)

Figure 4. Typical Reverse Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

0.026 (0.66)

0.023 (0.58)

NOTE: Lead diameter is

for suffix “E” part numbers

Document Number 88504

14-Sep-05

www.vishay.com

1 234

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