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1N4004G-T PDF预览

1N4004G-T

更新时间: 2024-11-27 11:46:15
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
3页 89K
描述
1.0A GLASS PASSIVATED RECTIFIER

1N4004G-T 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:23 weeks
风险等级:0.52Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Bright Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

1N4004G-T 数据手册

 浏览型号1N4004G-T的Datasheet PDF文件第2页浏览型号1N4004G-T的Datasheet PDF文件第3页 
1N4001G - 1N4007G  
1.0A GLASS PASSIVATED RECTIFIER  
Features and Benefits  
Mechanical Data  
Glass Passivated Die Construction  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 30A Peak  
Case: DO-41 Plastic  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD-  
202, Method 208  
Lead Free Finish, RoHS Compliant (Note 1)  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.30 grams (approximate)  
Ordering Information (Note 2)  
Device  
Packaging  
DO-41 Plastic  
DO-41 Plastic  
DO-41 Plastic  
DO-41 Plastic  
DO-41 Plastic  
DO-41 Plastic  
DO-41 Plastic  
Shipping  
1N4001G-T  
1N4002G-T  
1N4003G-T  
1N4004G-T  
1N4005G-T  
1N4006G-T  
1N4007G-T  
5K/Tape & Reel, 13-inch  
5K/Tape & Reel, 13-inch  
5K/Tape & Reel, 13-inch  
5K/Tape & Reel, 13-inch  
5K/Tape & Reel, 13-inch  
5K/Tape & Reel, 13-inch  
5K/Tape & Reel, 13-inch  
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007  
Characteristic  
Symbol  
Unit  
G
G
100  
70  
G
G
G
G
G
VRRM  
VRWM  
VR  
VR(RMS)  
IO  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
280  
1.0  
V
A
Average Rectified Output Current (Note 3) @ TA = 75°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
30  
A
V
IFSM  
VFM  
IRM  
1.0  
Forward Voltage @ IF = 1.0A  
Peak Reverse Current @TA  
= 25°C  
5.0  
50  
µA  
at Rated DC Blocking Voltage @ TA = 125°C  
Typical Reverse Recovery Time (Note 4)  
Typical Total Capacitance (Note 5)  
2.0  
8.0  
µs  
pF  
trr  
CT  
Typical Thermal Resistance Junction to Ambient  
100  
°C/W  
°C  
Rθ  
JA  
Operating and Storage Temperature Range  
-65 to +175  
T
, TSTG  
J
Notes:  
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.  
2. For packaging details, visit our website at http://www.diodes.com.  
3. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
4. Measured with IF = 0.5A, IR = -1A, Irr = 0.25A.  
5. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
1 of 3  
www.diodes.com  
January 2012  
© Diodes Incorporated  
1N4001G – 1N4007G  
Document number: DS29002 Rev. 8 - 2  

1N4004G-T 替代型号

型号 品牌 替代类型 描述 数据表
1N4004-T DIODES

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