1N4004H-T-T

更新时间： 2024-01-07 07:15:11

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	88K
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中文翻译

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数据手册

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1N4004H-T-T 数据手册

M C C

1N4001

THRU

1N4007

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Features

Low Current Leakage

1 Amp Rectifier

50 - 1000 Volts

Metalurgically Bonded Construction

Low Cost

Maximum Ratings

DO-41

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 20°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1N4001

1N4002

1N4003

1N4004

1N4005

1N4006

1N4007

---

35V

70V

50V

100V

200V

400V

600V

800V

1000V

Cathode

140V

280V

420V

560V

700V

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_A= 75°C

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

DIMENSIONS

Maximum

INCHES

MIN

.166

.080

.028

MIN

4.10

2.00

.70

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.1V

I_FM= 1.0A;

T_J= 25°C*

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

1.000

25.40

---

5.0mA

50mA

T_J= 25°C

T_J= 125°C

Typical Junction

Capacitance

C_J

15pF

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www.mccsemi.com

12 3

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