Datasheet > 1N4003GPT26R

1N4003GPT26R

更新时间： 2024-11-25 10:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	41K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,

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1N4003GPT26R 数据手册

1N4001GP - 1N4007GP

Features

• Low forward voltage drop.

• High surge current capability.

• High reliability.

DO-41

• High current capability.

COLOR BAND DENOTES CATHODE

General Purpose Rectifiers (Glass Passivated)

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

4001GP 4002GP 4003G 4004GP 4005GP 4006GP 4007GP

V_RRM

I_F(AV)

Maximum Repetitive Reverse Voltage

100

200

400

1.0

600

800

1000

Average Rectified Forward Current,

.375 " lead length @ T_A= 75°C

Non-repetitive Peak Forward Surge

Current

I_FSM

8.3 ms Single Half-Sine-Wave

Storage Temperature Range

-65 to +175

°C

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

3.0

R_θJA

°C/W

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Device

Units

4001GP 4002GP 4003G 4004GP 4005GP 4006GP 4007GP

V_F

I_R

Forward Voltage @ 1.0 A

1.1

5.0

µA

Reverse Current @ rated V_RT_A= 25°C

T_A= 125°C

C_T

Total Capacitance

8.0

V_R= 4.0 V, f = 1.0 MHz

2001 Fairchild Semiconductor Corporation

1N4001GP-1N4007GP, Rev. C

12 3

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