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1N3881-PBF PDF预览

1N3881-PBF

更新时间: 2024-11-08 04:16:11
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3页 427K
描述
Rectifier Diode

1N3881-PBF 数据手册

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1N3879-1N3883  
FAST RECOVERY SILICON RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Parameters  
Symbol  
VRWM  
VRRM  
TJ  
1N3879  
50V  
1N3880  
100V  
1N3881  
200V  
1N3882  
300V  
1N3883  
400V  
Working peak reverse voltage  
Peak repetitive reverse voltage  
Operating temperature range  
Storage temperature range  
Maximum thermal resistance  
Mounting torque  
50V  
100V  
200V  
300V  
400V  
-65 to +150°C  
-65 to +175°C  
Tstg  
RθJC  
2.0°C/W junction to case  
12-15 inch pounds  
Weight  
.16 ounces (5.0 grams) typical  
Add “R” to part numbers for reverse polarity.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameters  
Symbol  
IF(AV)  
IFSM  
VFM  
IRM  
Value  
6 Amps  
200 Amps  
1.40 Volts  
15 µA  
Test Condition  
Average forward current  
TC = 100°C, square wave, RθJC = 2.0°C/W  
8.3ms, half-sine, TC = 100°C  
IFM = 20A: TJ = 25°C*  
Maximum surge current  
Maximum peak forward voltage  
Maximum peak reverse current  
Maximum peak reverse current  
Maximum reverse recovery time  
Typical junction capacitance  
VRRM, TJ = 25°C  
IRM  
3.0 mA  
200nS  
VRRM, TJ = 150°C  
tRR  
IF = 1A dc, VR = 30V, di/dt = 25A/µs, TC = 55°C  
VR = 10V, f = 1MHz, TJ = 25°C  
CJ  
115pF  
Pulse test: pulse width 300µsec. Duty cycle 2%  
Rev. 20150317  

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