Datasheet > 1N3830E3

1N3830E3

更新时间： 2024-11-08 03:41:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	137K
描述
Zener Diode, 7.5V V(Z), 1W, Silicon, Unidirectional, DO-202AA, ROHS COMPLIANT, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

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1N3830E3 数据手册

1N3821 thru 1N3830A, e3

1 Watt Metal Case Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This well established zener diode series for the 1N3821 thru 1N3830A

JEDEC registration in the glass hermetic sealed DO-13 package provides a

low voltage selection for 3.3 to 7.5 volts. It is also well suited for high-

reliability applications where it is available in JAN, JANTX, and JANTXV

military qualifications. Higher voltages are also available in the 1N3016

thru 1N3051 series (6.8 V to 200 V) in the same package (see separate

data sheet). Microsemi also offers numerous other Zener diode products

for a variety of other packages including surface mount.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener Voltage Range: 3.3 V to 7.5 V

Hermetically sealed DO-13 metal package

Internally solder-bonded construction.

•

Regulates voltage over a broad operating current

and temperature range

•

Low voltage selection from 3.3 to 7.5 V

Tight voltage tolerances available

Low reverse (leakage) currents

Nonsensitive to ESD

Also available in JAN, JANTX, JANTXV qualifications

per MIL-PRF19500/115 by adding the JAN, JANTX,

or JANTXV prefixes to part numbers for desired level

of screening, e.g. JANTX1N3821, JANTXV1N3051A,

etc.

Hermetically sealed metal package

Inherently radiation hard as described in

Microsemi MicroNote 050

•

Surface mount also available with 1N3821UR-1 thru

1N30330AUR-1 series on separate data sheet

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Junction and Storage Temperatures:

-65^oC to +175^oC

THERMAL RESISTANCE: 50^oC/W* junction to lead

at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when leads are mounted on FR4

PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8”

(10 mm) from body or 1.0 Watts at T_L< +65^oC when

mounted on FR4 PC board as described for thermal

resistance above (also see Fig 1)

•

CASE: DO-13 (DO-202AA), welded, hermetically

sealed metal and glass

FINISH: All external surfaces are Tin-Lead (Pb/Sn)

or RoHS compliant annealed matte-Tin (Sn) plated

and solderable per MIL-STD-750 method 2026

•

POLARITY: Cathode connected case.

WEIGHT: 1.4 grams.

•

Tape & Reel option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimensions on last page

•

Forward Voltage @ 200 mA: 1.5 Volts.

Solder Temperatures: 260 ^oC for 10 s (maximum)

* For further mounting reference options, thermal resistance from junction to metal case is < 20 C/W

when mounting DO-13 metal case directly on heat sink.

3-12-2006 REV B

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N3830E3相关器件

型号	品牌	获取价格	描述	数据表
1N3830TR	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 10%, 1W, Silicon, Unidirectional, DO-202AA, HERMETIC SEALED, METAL
1N3830TRE3	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 10%, 1W,
1N3830UR-1	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LE
1N3830UR-1E3	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HER
1N3830UR-1E3TR	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HER
1N3830UR-1TR	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LE
1N3831	ETC	获取价格	SILICON PLANAR THYRISTOR DIODES
1N3832	ETC	获取价格	SILICON PLANAR THYRISTOR DIODES
1N3833	ETC	获取价格	SILICON PLANAR THYRISTOR DIODES
1N3834	ETC	获取价格	SILICON PLANAR THYRISTOR DIODES

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