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1N3825DUR-1 PDF预览

1N3825DUR-1

更新时间： 2024-11-07 13:32:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
3页 242K
描述
Zener Diode, 4.7V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEADLESS, GLASS, MELF-2

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1N3825DUR-1 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：DO-213AB包装说明：HERMETIC SEALED, LEADLESS, GLASS, MELF-2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.28Is Samacsys：N
其他特性：METALLURGICALLY BONDED, HIGH RELIABILITY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODE最大动态阻抗：8 Ω
JEDEC-95代码：DO-213ABJESD-30 代码：O-LELF-R2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：175 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.25 W
认证状态：Not Qualified标称参考电压：4.7 V
子类别：Voltage Reference Diodes表面贴装：YES
技术：ZENER端子面层：Tin/Lead (Sn/Pb)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：1%
工作测试电流：53 mABase Number Matches：1

1N3825DUR-1 数据手册

 浏览型号1N3825DUR-1的Datasheet PDF文件第2页浏览型号1N3825DUR-1的Datasheet PDF文件第3页 
1N3821UR-1 thru 1N3830AUR-1, e3 or  
MLL3821 thru MLL3830A, e3  
S C O T T S D A L E D I V I S I O N  
LEADLESS GLASS ZENER DIODES  
DESCRIPTION  
APPEARANCE  
This surface mountable zener diode series is similar to the lower voltage  
1N3821 thru 1N3830 JEDEC registration except it is in a surface mount  
DO-213AB package outline. It is an ideal selection for applications of high  
density and low parasitic requirements. Due to its glass hermetic qualities  
and enhanced metallurgical bonded internal construction, it is also well  
suited for high reliability applications. This can be acquired by a source  
control drawing (SCD), or simply by ordering device types with a MQ, MX  
or MV prefix for equivalent screening to JAN, JANTX or JANTXV  
respectively.  
DO-213AB  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Leadless package for surface mount equivalent to  
1N3821 thru 1N3830A.  
•
Regulates voltage over a broad operating current  
and temperature range  
•
•
•
•
•
Ideal for high-density mounting  
•
•
•
•
Leadless package for surface mounting  
Tight voltage tolerances available  
Ideal for high-density mounting  
Lower voltage selections of 3.3 V to 7.5 V  
Hermetically sealed, double-slug glass construction  
Metallurgically enhanced contact construction  
Metallurgically enhanced internal contact design  
for greater reliability and lower thermal resistance  
Options for screening in accordance with MIL-PRF-  
19500/115 for JAN, JANTX, and JANTXV with MQ, MX  
or MV prefixes respectively for part numbers, e.g.  
MX1N3821AUR-1, MV1N3828AUR-1, etc.  
•
•
•
•
Nonsensitive to ESD  
Hermetically sealed glass package  
Specified capacitance (see Figure 2)  
•
•
•
Axial lead “thru-hole” DO-13 packages per JEDEC  
registration available as 1N3821A thru 1N3830A (see  
separate data sheet with MIL-PRF-19500/115  
qualification)  
Inherently radiation hard as described in  
Microsemi MicroNote 050  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Power dissipation at 25ºC: 1.5 watts (also see derating  
in Figure 1).  
•
•
CASE: Hermetically sealed glass MELF package  
TERMINALS: Tin-Lead (SN/Pb) or RoHS  
compliant annealed matte-Tin (Sn) plating  
solderable per MIL-STD-750, method 2026  
•
•
Operating and Storage temperature: -65ºC to +175ºC  
Thermal Resistance: 40 ºC/W junction to end cap, or  
120ºC/W junction to ambient when mounted on FR4 PC  
board (1 oz Cu) with recommended footprint (see last  
page)  
•
POLARITY: Cathode indicated by band. Diode  
to be operated with the banded end positive with  
respect to the opposite end for Zener regulation  
•
Steady-State Power: 1.50 watts at end-cap  
temperature TEC < 115oC, or 1.25 watts at TA = 25ºC  
when mounted on FR4 PC board and recommended  
footprint as described for thermal resistance (also see  
Figure 1)  
•
•
MARKING: Cathode band only  
TAPE & REEL optional: Standard per EIA-481-1-  
A with 12 mm tape, 1500 per 7 inch reel or 5000  
per 13 inch reel (add “TR” suffix to part number)  
•
WEIGHT: 0.05 grams  
•
•
Forward voltage @200 mA: 1.2 volts (maximum)  
Solder Temperatures: 260 ºC for 10 s (max)  
•See package dimensions on last page  
Copyright © 2006  
3-12-2006 REV C  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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与1N3825DUR-1相关器件

型号 品牌 获取价格 描述 数据表
1N3825DUR-1E3 MICROSEMI

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 		Zener Diode, 4.7V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3825DUR-1E3TR MICROSEMI

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 		Zener Diode, 4.7V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3825DUR-1TR MICROSEMI

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 		Zener Diode, 4.7V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEA
1N3825DUR-1TRE3 MICROSEMI

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 		Zener Diode, 4.7V V(Z), 1%, 1.5W,
1N3825E3 MICROSEMI

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 		Zener Diode, 4.7V V(Z), 1W, Silicon, Unidirectional, DO-202AA, ROHS COMPLIANT, HERMETIC SE
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 		Zener Diode, 4.7V V(Z), 1W, Silicon, Unidirectional, DO-202AA, ROHS COMPLIANT, HERMETIC SE
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 		SILICON 1 WATT ZENER DIODES
1N3825TRE3 MICROSEMI

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 		Zener Diode, 4.7V V(Z), 10%, 1W,
1N3825UR-1 MICROSEMI

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 		SILICON 1 WATT ZENER DIODES
1N3825UR-1E3 MICROSEMI

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 		Zener Diode, 4.7V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HER

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