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1N3823C-TP PDF预览

1N3823C-TP

更新时间: 2024-11-16 19:49:55
品牌 Logo 应用领域
美微科 - MCC 测试二极管
页数 文件大小 规格书
4页 232K
描述
Zener Diode, 3.9V V(Z), 2%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, DO-41G, 2 PIN

1N3823C-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.2
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-LALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
标称参考电压:3.9 V表面贴装:NO
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:2%
工作测试电流:64 mABase Number Matches:1

1N3823C-TP 数据手册

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M C C  
Micro Commercial Components  
1N3821A  
THRU  
1N3828A  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Features  
1.0 Watt  
Double Plug Construction  
Metallurgically Bound  
Zener Diode  
3.3 to 6.2 Volts  
x
Marking: CathodeBand and Type Number  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
·
Moisture Sensitivity Level 1  
DO-41G  
Maximum Ratings & Thermal Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
D
Forward Voltage  
at IF=200mA  
V
VF  
1.2  
A
Power  
Cathode  
Mark  
Dissipation at  
TL = 95°C  
Ptot  
1.0  
W
B
D
Power  
oC  
Derating  
mW/  
12.5  
C
Abrove  
TL = 95°C  
Operating  
oC  
T
j
-65 ~ +175  
Temperature  
Storage  
DIMENSIONS  
INCHES  
M M  
DIM  
A
NOTE  
MIN  
MAX  
0.177  
0.110  
MIN  
-----  
-----  
MAX  
Temperature  
Range  
TSTG  
-65 ~ +175  
oC  
-----  
-----  
4.50  
2.80  
Diameter  
Diameter  
B
C
D
0.026  
1.000  
0.034  
-----  
0.70  
0.90  
-----  
25.40  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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