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1N3823TRE3 PDF预览

1N3823TRE3

更新时间: 2024-11-16 14:39:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
3页 137K
描述
Zener Diode, 3.9V V(Z), 10%, 1W,

1N3823TRE3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:9 Ω元件数量:1
最高工作温度:175 °C最大功率耗散:1 W
标称参考电压:3.9 V子类别:Voltage Reference Diodes
表面贴装:NO最大电压容差:10%
工作测试电流:64 mABase Number Matches:1

1N3823TRE3 数据手册

 浏览型号1N3823TRE3的Datasheet PDF文件第2页浏览型号1N3823TRE3的Datasheet PDF文件第3页 
1N3821 thru 1N3830A, e3  
1 Watt Metal Case Zener Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This well established zener diode series for the 1N3821 thru 1N3830A  
JEDEC registration in the glass hermetic sealed DO-13 package provides a  
low voltage selection for 3.3 to 7.5 volts. It is also well suited for high-  
reliability applications where it is available in JAN, JANTX, and JANTXV  
military qualifications. Higher voltages are also available in the 1N3016  
thru 1N3051 series (6.8 V to 200 V) in the same package (see separate  
data sheet). Microsemi also offers numerous other Zener diode products  
for a variety of other packages including surface mount.  
DO-13  
(DO-202AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Zener Voltage Range: 3.3 V to 7.5 V  
Hermetically sealed DO-13 metal package  
Internally solder-bonded construction.  
Regulates voltage over a broad operating current  
and temperature range  
Low voltage selection from 3.3 to 7.5 V  
Tight voltage tolerances available  
Low reverse (leakage) currents  
Nonsensitive to ESD  
Also available in JAN, JANTX, JANTXV qualifications  
per MIL-PRF19500/115 by adding the JAN, JANTX,  
or JANTXV prefixes to part numbers for desired level  
of screening, e.g. JANTX1N3821, JANTXV1N3051A,  
etc.  
Hermetically sealed metal package  
Inherently radiation hard as described in  
Microsemi MicroNote 050  
Surface mount also available with 1N3821UR-1 thru  
1N30330AUR-1 series on separate data sheet  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating Junction and Storage Temperatures:  
-65oC to +175oC  
THERMAL RESISTANCE: 50oC/W* junction to lead  
at 0.375 inches (10 mm) from body or 110 oC/W  
junction to ambient when leads are mounted on FR4  
PC board with 4 mm2 copper pads (1 oz) and track  
width 1 mm, length 25 mm  
DC Power Dissipation*: 1 Watt at TL < +125oC 3/8”  
(10 mm) from body or 1.0 Watts at TL < +65oC when  
mounted on FR4 PC board as described for thermal  
resistance above (also see Fig 1)  
CASE: DO-13 (DO-202AA), welded, hermetically  
sealed metal and glass  
FINISH: All external surfaces are Tin-Lead (Pb/Sn)  
or RoHS compliant annealed matte-Tin (Sn) plated  
and solderable per MIL-STD-750 method 2026  
POLARITY: Cathode connected case.  
WEIGHT: 1.4 grams.  
Tape & Reel option: Standard per EIA-296 (add  
“TR” suffix to part number)  
See package dimensions on last page  
Forward Voltage @ 200 mA: 1.5 Volts.  
Solder Temperatures: 260 o C for 10 s (maximum)  
o
* For further mounting reference options, thermal resistance from junction to metal case is < 20 C/W  
when mounting DO-13 metal case directly on heat sink.  
Copyright © 2006  
3-12-2006 REV B  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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