Datasheet > 1N3612GP-E3/54

1N3612GP-E3/54

更新时间： 2024-11-24 14:46:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	77K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N3612GP-E3/54 数据手册

1N3611GP, 1N3612GP, 1N3613GP, 1N3614GP, 1N3957GP

www.vishay.com

Vishay General Semiconductor

Glass Passivated Junction Plastic Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current, I_Rless than 0.1 μA

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-204AL (DO-41)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters, and freewheeling diodes application

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

V_RRM

200 V, 400 V, 600 V, 800 V, 1000 V

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

I_FSM

30 A

1.0 μA

I_R

V_F

1.0 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

Package

Diode variation

175 °C

DO-204AL (DO-41)

Single die

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted) ⁽¹⁾

PARAMETER

SYMBOL 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 75 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

°C

Note

(1)

JEDEC^®registered values

Revision: 08-Jun-16

Document Number: 88502

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与1N3612GP-E3/54相关器件

型号	品牌	获取价格	描述	数据表
1N3612GP-E3/73	VISHAY	获取价格	Diode Switching 400V 1A 2-Pin DO-204AL Ammo
1N3612GP-HE3	VISHAY	获取价格	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signa
1N3612GPHE3/54	VISHAY	获取价格	STD RECOVERY RECTFR 400V 1A 2PIN DO-41 - Tape and Reel
1N3612GP-HE3/54	VISHAY	获取价格	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N3612GP-HE3/73	VISHAY	获取价格	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N3612R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2
1N3612S	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,
1N3612X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2
1N3613	NJSEMI	获取价格	General Purpose Rectifiers in A Bodt Package
1N3613	SEMTECH	获取价格	Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode

与1N3612GP-E3/54相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3612GP-E3/54

1N3612GP-E3/54 数据手册

与1N3612GP-E3/54相关器件

与1N3612GP-E3/54相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3612GP-E3/54

1N3612GP-E3/54 数据手册

与1N3612GP-E3/54相关器件

与1N3612GP-E3/54相关文章

您还可以找

您在本页遇到什么问题？