Datasheet > 1N3311AE3

1N3311AE3

更新时间： 2024-11-04 14:55:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试光电二极管
页数	文件大小	规格书
3页	374K
描述
Zener Diode, 12V V(Z), 10%, 50W, Silicon, Unidirectional, DO-203AB, HERMETIC SEALED, METAL GLASS, DO-5, 1 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N3311AE3 技术参数

生命周期：	Active	包装说明：	O-MUPM-D1
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.65
其他特性：	PD-CASE	外壳连接：	ANODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-203AB
JESD-30 代码：	O-MUPM-D1	元件数量：	1
端子数量：	1	最高工作温度：	175 °C
最低工作温度：	-65 °C	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	POST/STUD MOUNT
极性：	UNIDIRECTIONAL	最大功率耗散：	50 W
标称参考电压：	12 V	表面贴装：	NO
技术：	ZENER	端子形式：	SOLDER LUG
端子位置：	UPPER	最大电压容差：	10%
工作测试电流：	1000 mA	Base Number Matches：	1

1N3311AE3 数据手册

1N3305 thru 1N3350B

and 1N4549B thru 1N4556B

50 WATT ZENER DIODES

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These high power 50 W Zener diodes represented by the JEDEC

registered 1N3305 thru 1N3350B and 1N4549 thru 1N4556B series provide

voltage regulation in a selection over a 3.9 V to 200 V broad range of

voltages. They may be operated up to 50 W with adequate mounting and

heat sinking with their low thermal resistance. These Zeners are also

available in JAN, JANTX, JANTXV military qualifications. Microsemi also

offers numerous other Zener products to meet higher and lower power

applications.

DO- 5

(DO-203AB)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N3305 thru 1N3350B and

•

Regulates voltage over a broad operating

current and temperature range

Standard voltage tolerances are +/- 5% with B

suffix, +/-10% with an A suffix, and +/-20% with no

suffix

1N4549 thru 1N4556B

•

Internal solder bond construction

Hermetically sealed (welded)

Zener Voltage 3.9V to 200V.

Also available in JAN, JANTX, and JANTXV

qualifications per MIL-PRF-19500/358 by adding

the JAN, JANTX, or JANTXV prefixes to part

numbers for desired level of screening; (e.g.

JANTX1N3305B, JANTXV1N3318B, etc.

•

Consult factory for +/-2% or +/-1% with a C or D

suffix respectively

•

Reverse polarity available

Nonsensitive to ESD per MIL-STD-750 Method

1020

•

Standard polarity is anode to case

•

Inherently radiation hard as described in

Microsemi MicroNote 050

Reverse polarity with cathode to case by

designating R suffix in part number, e.g.

1N3305RB, etc.

•

Consult factory for surface mount equivalents

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction & Storage Temperatures: -65^oC to +175^oC

DC Power Dissipation: 50 watts at T_C< 75 ^oC

Power Derating: 0.5 W/^oC above 75^oC

•

CASE: Industry Standard DO-5 (DO-203AB),

11/16 inch hexagonal stud with 1/4-28 threads

welded hermetically sealed metal and glass

•

FINISH: All external surfaces are corrosion

Forward Voltage @ 10 A: 1.5 Volts

resistant and terminal solderable.

THERMAL RESISTANCE: 2.0 ^oC/W maximum

junction to hexagonal base (1.5 ^oC/W typical)

POLARITY: Standard Polarity units are connected

anode to case. Reverse polarity (cathode to case)

is indicated by Suffix R in part number

•

Solder temperatures: 260 ^oC for 10 s (max)

•

WEIGHT: 15 grams

MOUNTING HARDWARE: Consult factory for

optional insulator, bushing, solder terminal,

washers and nut

•

See package dimensions on last page

Microsemi

Page 1

11-12-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N3311AE3相关器件

型号	品牌	获取价格	描述	数据表
1N3311AR	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 10%, 50W, Silicon, Unidirectional, DO-5
1N3311B	NJSEMI	获取价格	ZENER DIODE
1N3311B	MICROSEMI	获取价格	SILICON 50 WATT ZENER DIODES
1N3311B	NAINA	获取价格	50W ZENER(DO5)
1N3311B	CENTRAL	获取价格	Zener Diode, 12V V(Z), 5%, 50W, Silicon, Unidirectional, DO-5, HERMETICALLY SEALED, METAL
1N3311BCOX.120	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 5%, Silicon, Unidirectional,
1N3311BCOX.160	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 5%, Silicon, Unidirectional,
1N3311BCOX.200	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 5%, Silicon, Unidirectional,
1N3311BCOX.250	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 5%, Silicon, Unidirectional,
1N3311BE3	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 5%, 50W, Silicon, Unidirectional, DO-203AB, HERMETIC SEALED, METAL

与1N3311AE3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3311AE3

1N3311AE3 技术参数

1N3311AE3 数据手册

与1N3311AE3相关器件

与1N3311AE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3311AE3

1N3311AE3 技术参数

1N3311AE3 数据手册

与1N3311AE3相关器件

与1N3311AE3相关文章

您还可以找

您在本页遇到什么问题？