Datasheet > 1N3033DUR-1TR

1N3033DUR-1TR

更新时间： 2024-11-26 19:15:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	161K
描述
Zener Diode, 36V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEADLESS, GLASS, MELF-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N3033DUR-1TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-213AB	包装说明：	HERMETIC SEALED, LEADLESS, GLASS, MELF-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.23	其他特性：	METALLURGICALLY BONDED, HIGH RELIABILITY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	50 Ω	JEDEC-95代码：	DO-213AB
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.25 W	认证状态：	Not Qualified
标称参考电压：	36 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	1%	工作测试电流：	7 mA
Base Number Matches：	1

1N3033DUR-1TR 数据手册

1N3016BUR-1 thru 1N3051BUR-1, e3

(or MLL3016B thru MLL3051B, e3)

Surface Mount 1.5 W

S C O T T S D A L E D I V I S I O N

GLASS ZENER DIODES

DESCRIPTION

APPEARANCE

This surface mountable zener diode series is similar to the 1N3016 thru

1N3051 JEDEC registration in the DO-13 package except that it meets the

surface mount DO-213AB outline. It is an ideal selection for applications of

high density and low parasitic requirements. Due to its glass hermetic seal

qualities and metallurgically enhanced internal construction, it is also well

suited for high-reliability applications. This can be acquired by a source

control drawing (SCD), or by ordering device types with MQ, MX, or MV

prefix to part number for equivalent screening to JAN, JANTX or JANTXV.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Leadless surface mount package equivalents to the

JEDEC registered 1N3016 thru 1N3051 except with

higher power rating of 1.5 Watts

•

Regulates voltage over a broad operating current

and temperature range

•

Wide selection from 6.8 to 200 V

Tight voltage tolerances available

Low reverse (leakage) currents

Leadless package for surface mounting

Ideal for high-density mounting

•

Ideal for high-density mounting

Voltage range: 6.8 to 200 volts

Hermetically sealed, double-slug glass construction

Metallurgically enhanced contact construction.

Options for screening in accordance with MIL-PRF-

19500/115 for JAN, JANTX, JANTXV, and JANS with

MQ, MX, MV, or MSP prefixes respectively for part

numbers, e.g. MX1N3016BUR-1, MV1N3051BUR-1,

etc.

Metallurgically enhanced internal contact design for

greater reliability and lower thermal resistance

•

Nonsensitive to ESD

Hermetically sealed glass package

Specified capacitance (see Figure 2)

•

Axial lead “thru-hole” DO-13 packages per JEDEC

registration available as 1N3016B thru 1N3051B (see

separate data sheet with MIL-PRF-19500/115

qualification)

Inherently radiation hard as described in Microsemi

MicroNote 050

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 1.5 watts (also see

derating in Figure 1).

•

CASE: Hermetically sealed glass MELF package

TERMINALS: Tin-lead or RoHS compliant

annealed matte-Tin plating solderable per MIL-

STD-750, method 2026

Operating and Storage temperature: -65^ºC to

+175^ºC

Thermal Resistance: 40 ^ºC/W junction to end cap,

or 120^ºC/W junction to ambient when mounted on

FR4 PC board (1 oz Cu) with recommended

footprint (see last page)

•

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end for Zener regulation

•

MARKING: Cathode band only

•

Steady-State Power: 1.50 watts at end-cap

temperature T_EC< 115^oC, or 1.25 watts at T_A= 25^ºC

when mounted on FR4 PC board and

recommended footprint as described for thermal

resistance (also see Figure 1)

TAPE & REEL optional: Standard per EIA-481-1-A

with 12 mm tape, 1500 per 7 inch reel or 5000 per

13 inch reel (add “TR” suffix to part number)

•

WEIGHT: 0.05 grams

See package dimensions on last page

•

Forward voltage @200 mA: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

3-12-2006 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N3033DUR-1TR相关器件

型号	品牌	获取价格	描述	数据表
1N3033DUR-1TRE3	MICROSEMI	获取价格	Zener Diode, 36V V(Z), 1%, 1.5W,
1N3033E3	MICROSEMI	获取价格	Zener Diode, 36V V(Z), 20%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PAC
1N3033TR	MICROSEMI	获取价格	1 WATT METAL CASE ZENER DIODES
1N3033TRUR-1	MICROSEMI	获取价格	1 WATT METAL CASE ZENER DIODES
1N3033UR-1	MICROSEMI	获取价格	1 WATT METAL CASE ZENER DIODES
1N3033UR-1E3	MICROSEMI	获取价格	Zener Diode, 36V V(Z), 20%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,
1N3033UR-1E3TR	MICROSEMI	获取价格	Zener Diode, 36V V(Z), 20%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3033UR-1TR	MICROSEMI	获取价格	Zener Diode, 36V V(Z), 20%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEA
1N3033UR-1TRE3	MICROSEMI	获取价格	Zener Diode, 36V V(Z), 20%, 1.5W,
1N3034	MOTOROLA	获取价格	1.0 WATT METAL SILICON ZENER DIODES

与1N3033DUR-1TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3033DUR-1TR

1N3033DUR-1TR 技术参数

1N3033DUR-1TR 数据手册

与1N3033DUR-1TR相关器件

与1N3033DUR-1TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3033DUR-1TR

1N3033DUR-1TR 技术参数

1N3033DUR-1TR 数据手册

与1N3033DUR-1TR相关器件

与1N3033DUR-1TR相关文章

您还可以找

您在本页遇到什么问题？