生命周期: | Active | 包装说明: | METAL, DO-5, 1 PIN |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.72 |
应用: | POWER | 外壳连接: | ANODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-203AB |
JESD-30 代码: | O-MUPM-D1 | 最大非重复峰值正向电流: | 800 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最高工作温度: | 200 °C |
最低工作温度: | -65 °C | 最大输出电流: | 40 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 最大重复峰值反向电压: | 150 V |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N2022 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N2022 | NJSEMI |
获取价格 |
Silicon Power Rectifiers | |
1N2022E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 250V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P | |
1N2022R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 250V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P | |
1N2022RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 250V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P | |
1N2023 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N2023 | NJSEMI |
获取价格 |
Silicon Power Rectifiers | |
1N2023A | NJSEMI |
获取价格 |
Temperature-compensated zcncr reference diodes | |
1N2023R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 300V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P | |
1N2023RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 300V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P |