是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | DO-9 | 包装说明: | DO-9, 1 PIN |
针数: | 1 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.54 | 应用: | SOFT RECOVERY POWER |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.3 V | JEDEC-95代码: | DO-205AB |
JESD-30 代码: | O-MUPM-H1 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 5000 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 190 °C | 最低工作温度: | -65 °C |
最大输出电流: | 275 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 100 V | 子类别: | Rectifier Diodes |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N1661R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 100V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1661RIL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 275A, 100V V(RRM), | |
1N1662 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1662ILE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 150V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1662R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 150V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1662RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 150V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1662RIL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 275A, 150V V(RRM), | |
1N1663 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1663E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1663IL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN |