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1KSMB11A PDF预览

1KSMB11A

更新时间: 2024-11-18 06:16:23
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 138K
描述
Transient Voltage Suppression Diodes

1KSMB11A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-J2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.65Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED最大击穿电压:11.6 V
最小击穿电压:10.5 V击穿电压标称值:11 V
最大钳位电压:15.6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-J2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:1000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:9.4 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

1KSMB11A 数据手册

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TransientVoltage Suppression Diodes  
Surface Mount – 1000W > 1KSMB series  
RoHS  
1KSMB Series  
Description  
The 1KSMB series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 5ZQJDBMꢀ*R less than 1ꢀA  
above 12V  
tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ  
applications to optimize  
board space  
tꢀ -PXꢀQSPmMFꢀQBDLBHF  
tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT  
tꢀ )JHI5FNQFSBUVSFꢀ  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability 94V-O  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E128662  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
junction  
tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
tꢀ .BUUF5JOꢀ-FBEoGSFFꢀ1MBUFE  
tꢀ "WBJMBCMFꢀJOꢀCSFBLEPXOꢀ  
Voltage from 6.8V to 160V  
specially designed for  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
automotive applications  
tꢀ 0GGFSTꢀ)JHIꢁ4VSHFꢀSBUJOHꢀJOꢀ  
compact package: bridges  
the gap between 600W  
and 1.5KW  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0V to BV min  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Parameter  
Symbol  
PPPM  
Value  
1000  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10x1000ꢀs waveform  
(Fig.1)(Note 1), (Note 2)  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
5.0  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
100  
Applications  
Maximum Instantaneous Forward  
Voltage at 50A for Unidirectional  
only (Note 4)  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
VF  
3.5V/5.0  
V
V
Computer, Industrial and Consumer electronic applications.  
Operating Junction and Storage  
Temperature Range  
T , TSTG -65 to 150  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
20  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
100  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
4. VF<3.5V for VBR<_ 50V and VF<5.0V for VBR >_ 51V.  
©2009 Littelfuse, Inc.  
35  
Revision: January 09, 2009  
1KSMB Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/1KSMB.html for current information.  

1KSMB11A 替代型号

型号 品牌 替代类型 描述 数据表
1KSMBJ11A LITTELFUSE

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Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor
1KSMB11 LITTELFUSE

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