1KSMB12

更新时间： 2024-11-19 13:45:15

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管瞬态抑制器
页数	文件大小	规格书
5页	138K
描述
功能与特色:

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1KSMB12 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 1000W > 1KSMB series

RoHS

1KSMB Series

Description

The 1KSMB series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

tꢀ)BMPHFOꢁ'SFF

tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ

resistance

tꢀ 3P)4ꢀDPNQMJBOU

tꢀ 5ZQJDBMꢀ*_Rless than 1ꢀA

above 12V

tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ

applications to optimize

board space

tꢀ -PXꢀQSPmMFꢀQBDLBHF

tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG

tꢀ 5ZQJDBMꢀNBYJNVNꢀ

temperature coefﬁcient

ΔV_BR= 0.1% x V_BR@25°C x ΔT

tꢀ )JHIꢀ5FNQFSBUVSFꢀ

soldering guaranteed:

260°C/40 seconds at

terminals

tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ

Underwriters Laboratory

Flammability 94V-O

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E128662

tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ

junction

tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ

capability at 10×1000μs

waveform, repetition rate

(duty cycles):0.01%

tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀ1MBUFE

tꢀ "WBJMBCMFꢀJOꢀCSFBLEPXOꢀ

Voltage from 6.8V to 160V

specially designed for

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

automotive applications

tꢀ 0GGFSTꢀ)JHIꢁ4VSHFꢀSBUJOHꢀJOꢀ

compact package: bridges

the gap between 600W

and 1.5KW

tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ

typically less than 1.0ps

from 0V to BV min

tꢀ &YDFMMFOUꢀDMBNQJOHꢀ

capability

Parameter

Symbol

P_PPM

Value

1000

Unit

Peak Pulse Power Dissipation at

T_A=25ºC by 10x1000ꢀs waveform

(Fig.1)(Note 1), (Note 2)

Power Dissipation on inﬁnite heat

sink atT_A=50^OC

P_M(AV)

I_FSM

5.0

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

100

Applications

Maximum Instantaneous Forward

Voltage at 50A for Unidirectional

only (Note 4)

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

V_F

3.5V/5.0

Computer, Industrial and Consumer electronic applications.

Operating Junction and Storage

Temperature Range

T , T_STG-65 to 150

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

100

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated aboveT_A= 25^OC per Fig. 2.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only, duty cycle=4 per minute maximum.

4. V_F<3.5V for V_BR<_ 50V and V_F<5.0V for V_BR>_ 51V.

Revision: January 09, 2009

1KSMB Series

Speciﬁcations are subject to change without notice.

Please refer to http://www.Littelfuse.com/series/1KSMB.html for current information.

12 3 4 5

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与1KSMB12相关器件

型号	品牌	获取价格	描述	数据表
1KSMB120	LITTELFUSE	获取价格	功能与特色:
1KSMB120A	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
1KSMB120C	LITTELFUSE	获取价格	功能与特色:
1KSMB120CA	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
1KSMB12A	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
1KSMB12A	RECTRON	获取价格	Package / Case : DO-214AA(SMB);Mounting Style : SMD/SMT;Power Rating : 1000 W;Polarity : U
1KSMB12C	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 1000W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO
1KSMB12CA	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
1KSMB12CA	RECTRON	获取价格	Package / Case : DO-214AA(SMB);Mounting Style : SMD/SMT;Power Rating : 1000 W;Polarity : B
1KSMB12CA-T	RECTRON	获取价格	Trans Voltage Suppressor Diode,

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