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1F4G-T PDF预览

1F4G-T

更新时间: 2024-11-13 19:44:51
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
2页 25K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, R-1, 2 PIN

1F4G-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, R-1, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.15 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1F4G-T 数据手册

 浏览型号1F4G-T的Datasheet PDF文件第2页 
1F1G  
THRU  
1F7G  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
FAST RECOVERY  
GLASS PASSIVATED RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Fast switching  
* Low leakage  
* Low forward voltage drop  
* High current capability  
* High currenf surge  
* High reliability  
R-1  
* Glass passivated junction  
MECHANICAL DATA  
* Case: Molded plastic  
(
)
.025 0.65  
DIA.  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(
)
.021 0.55  
(
)
.787 20.0  
MIN.  
* Weight: 0.19 gram  
(
)
.126 3.2  
(
)
.106 2.7  
(
)
.102 2.6  
DIA.  
(
)
.091 2.3  
(
)
.787 20.0  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1F1G  
50  
1F2G  
100  
1F3G  
200  
1F4G  
400  
1F5G  
600  
1F6G  
800  
1F7G  
1000  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
RRM  
RMS  
Volts  
Volts  
Volts  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
100  
1000  
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified Current  
I
O
1.0  
25  
Amps  
Amps  
at TA  
= 25oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Typical Junction Capacitance (Note 2)  
C
J
15  
pF  
0 C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
Maximum Instantaneous Forward Voltage at 1.0A DC  
Maximum DC Reverse Current  
SYMBOL  
1F1G  
1F2G  
1F3G  
1F4G  
1.3  
1F5G  
1F6G  
1F7G UNITS  
Volts  
V
F
5.0  
uAmps  
uAmps  
at Rated DC Blocking Voltage T  
Maximum Full Load Reverse Current Full Cycle Average,  
.375” (9.5mm) lead length at T  
= 55oC  
A
= 25oC  
I
R
100  
L
Maximum Reverse Recovery Time (Note 1)  
NOTES : 1. Reverse Recovery Test Conditions: I  
trr  
150  
250  
500  
nSec  
F
= 0.5A, IR = -1.0A, IRR = -0.25A  
2001-5  
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts  

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