5秒后页面跳转
1A7G-B PDF预览

1A7G-B

更新时间: 2024-01-02 10:32:33
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
2页 21K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, R-1, 2 PIN

1A7G-B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, R-1, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.34其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1A7G-B 数据手册

 浏览型号1A7G-B的Datasheet PDF文件第2页 
1A1G  
THRU  
1A7G  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* High reliability  
* Low leakage  
* Low forward voltage drop  
* High current capability  
* Glass passivated junction  
R-1  
MECHANICAL DATA  
* Case: Molded plastic black body  
* Epoxy: Device hasUL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(
)
.025 0.65  
DIA.  
(
)
.021 0.55  
(
)
.787 20.0  
MIN.  
* Weight: 0.19 gram  
(
)
.126 3.2  
(
)
.106 2.7  
(
)
.102 2.6  
DIA.  
(
)
.091 2.3  
(
)
.787 20.0  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1A1G  
50  
1A2G  
100  
1A3G  
200  
1A4G  
400  
1A5G  
600  
1A6G  
800  
1A7G  
1000  
UNITS  
Volts  
Volts  
Volts  
V
V
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
RMS  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
DC  
O
100  
1000  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
I
1.0  
25  
Amps  
Amps  
at TA  
= 25oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
C
J
15  
60  
pF  
0C/W  
0 C  
Typical Junction Capacitance (Note)  
Typical Thermal Resistance  
R θ J A  
, TSTG  
Operating and Storage Temperature Range  
T
J
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
1A1G  
1A2G  
1A3G  
1A4G  
1.1  
1A5G  
1A6G  
1A7G UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 1.0A DC  
VF  
@T  
A
A
= 25oC  
= 100oC  
5.0  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
uAmps  
50  
I
R
Maximum Full Load Reverse Current Full Cycle Average  
.375” (9.5mm) lead length at T  
= 75oC  
uAmps  
2001-5  
30  
L
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts  
Z

与1A7G-B相关器件

型号 品牌 描述 获取价格 数据表
1A7G-E RECTRON Rectifier Diode,

获取价格

1A7G-F RECTRON 暂无描述

获取价格

1A7G-J RECTRON Rectifier Diode,

获取价格

1A7GV-B RECTRON Rectifier Diode,

获取价格

1A7GV-E RECTRON Rectifier Diode,

获取价格

1A7GV-F RECTRON 暂无描述

获取价格