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1N5822 PDF预览

1N5822

更新时间： 2024-05-23 22:21:28
品牌 Logo 应用领域
星海 - CZSTARSEA /
页数 文件大小 规格书
2页 21K
描述
DO-201AD

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中文翻译

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1N5822 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：HERMETIC SEALED, D5B, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：1.63Is Samacsys：N
其他特性：METALLURGICALLY BONDED应用：GENERAL PURPOSE
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.4 VJESD-30 代码：O-LELF-R2
JESD-609代码：e0元件数量：1
相数：1端子数量：2
最高工作温度：125 °C最大输出电流：3 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：40 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin/Lead (Sn/Pb)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N5822 数据手册

 浏览型号1N5822的Datasheet PDF文件第2页 
1N5820 THRU 1N5822  
SCHOTTKY BARRIER RECTIFIER  
Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes  
DO-201AD  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
1.0 (25.4)  
MIN.  
Metal silicon junction,majority carrier conduction  
Guardring for overvoltage protection  
0.220(5.6)  
0.197(5.0)  
DIA.  
Low power loss,high erriciency  
High current capability,low forward voltage drop  
High surge capability  
0.375 (9.50)  
0.285(7.20)  
For use in low voltage,high frequency inverters,  
free wheeling,and polarity protection applications  
High temperature soldering guaranteed:  
260 C/10 seconds,0.375”(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
1.0 (25.4)  
MIN.  
0.052 (1.3)  
0.048 (1.2)  
DIA.  
MECHANICAL DATA  
Case: JEDEC DO-201AD molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Dimensions in inches and (millimeters)  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.04 ounce, 1.10 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.  
SYMBOLS  
1N5820  
1N5821  
1N5822  
UNITS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
20  
14  
20  
30  
21  
30  
40  
28  
40  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375”(9.5mm) lead length at TL=95 C  
Peak forward surge current  
I(AV)  
3.0  
A
IFSM  
80.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
VF  
IR  
0.475  
0.500  
0.525  
V
Maximum instantaneous forward voltage at 3.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
0.5  
40.0  
mA  
TA=100 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
C/W  
C
300.0  
40.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
TJ,TSTG  
-55 to +125  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted  
DN:T08G11A0  
STAR SEA  
12

中文翻译

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与1N5822相关器件

型号 品牌 获取价格 描述 数据表
1N5822/1-E3 VISHAY

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 		DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/23 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/4E-E3 VISHAY

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 		DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/4F VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/4G VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/4G-E3 VISHAY

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 		DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/4H VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/51 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/51-E3 VISHAY

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 		DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/54 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC

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