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1N4934GP PDF预览

1N4934GP

更新时间： 2024-01-03 18:24:40
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管开关
页数 文件大小 规格书
2页 172K
描述
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A

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中文翻译

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1N4934GP 技术参数

生命周期：Active零件包装代码：DO-41
包装说明：O-PALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.3
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-41JESD-30 代码：O-PALF-W2
JESD-609代码：e0元件数量：1
端子数量：2最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM认证状态：Not Qualified
最大重复峰值反向电压：100 V最大反向恢复时间：0.2 µs
表面贴装：NO端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL

1N4934GP 数据手册

 浏览型号1N4934GP的Datasheet PDF文件第2页 
1N4933GP THRU 1N4937GP  
SINTERED GLASS JUNCTION  
FAST SWITCHING PLASTIC RECTIFIER  
VOLTAGE:50 TO 600V  
CURRENT: 1.0A  
DO-41\DO-204AL  
FEATURE  
High temperature metallurgic ally bonded construction  
Sintered glass cavity free junction  
Capability of meeting environmental standard of  
MIL-S-19500  
High temperature soldering guaranteed  
350°C/10sec/0.375”lead length at 5 lbs tension  
Operate at Ta =75°C with no thermal run away  
Typical Ir<0.1µA  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
1N4933  
GP  
1N4934 1N4935 1N4936 1N4937  
SYMBOL  
units  
GP  
100  
70  
GP  
200  
140  
200  
GP  
400  
280  
400  
GP  
600  
420  
600  
*
*
*
*
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC blocking Voltage  
Maximum Average Forward Rectified  
Current 3/8”lead length at Ta =75°C  
Peak Forward Surge Current 8.3ms single  
Half sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
Current and 25°C  
Vrrm  
Vrms  
Vdc  
50  
35  
50  
V
V
V
100  
If(av)  
Ifsm  
Vf  
1.0  
30.0  
1.2  
A
A
V
*
*
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =125°C  
5.0  
100  
µA  
µA  
Ir  
*
*
Maximum Reverse Recovery Time (Note 1)  
Trr  
Cj  
R(ja)  
Tstg, Tj  
200.0  
15.0  
55.0  
nS  
pF  
°C /W  
°C  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
Storage and Operating Junction Temperature  
-65 to +175  
Note:  
1. Reverse Recovery Condition If =1.0A, Vr =30V  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
* JEDEC registered value  
Rev.A4  
www.gulfsemi.com  
12

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 		Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4934GP/62 VISHAY

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1N4934GP/64 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4934GP/70 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4934GP/73 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4934GP/74 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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