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1N4934GPT50R PDF预览

1N4934GPT50R

更新时间: 2024-09-25 14:46:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 45K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, D4, 2 PIN

1N4934GPT50R 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:D4, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:2.73 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.15 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4934GPT50R 数据手册

 浏览型号1N4934GPT50R的Datasheet PDF文件第2页浏览型号1N4934GPT50R的Datasheet PDF文件第3页 
1N4933GP - 1N4937GP  
Features  
Low forward voltage drop.  
High surge current capability.  
High reliability.  
DO-41  
High current capability.  
COLOR BAND DENOTES CATHODE  
Fast Rectifiers (Glass Passivated)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
4933G  
4934 4935 4936 4937  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
50  
100  
200  
400  
600  
V
A
Average Rectified Forward Current,  
.375 " lead length @ TA = 75°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
1.0  
IFSM  
30  
A
Storage Temperature Range  
-65 to +175  
-65 to +175  
°C  
°C  
Tstg  
TJ  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
2.73  
55  
W
RθJA  
°C/W  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Device  
Units  
4933G 4934 4935 4936 4937  
VF  
trr  
Forward Voltage @ 1.0 A  
Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Reverse Current @ rated VR T = 25 C  
1.2  
V
150  
ns  
IR  
5.0  
100  
A
A
µ
µ
°
A
T = 125 C  
°
A
CT  
Total Capacitance  
VR = 4.0 V, f = 1.0 MHz  
15  
pF  
2001 Fairchild Semiconductor Corporation  
1N4933GP-1N4937GP, Rev. C  

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