Datasheet > 1888-03

1888-03

更新时间： 2024-11-29 22:09:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波通信
页数	文件大小	规格书
4页	45K
描述
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

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中文翻译

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数据手册

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1888-03 数据手册

SD1888-03

RF & MICROWAVE TRANSISTORS

1.6 GHz SATCOM APPLICATIONS

1.65 GHz

28 VOLTS

EFFICIENCY 50% MIN.

CLASS C OPERATION

COMMON BASE

INPUT/OUTPUT MATCHING

P_OUT24 W MIN. WITH 9.0 dB GAIN

.250 x .320 2LFL (M170)

epoxy sealed

ORDER CODE

BRANDING

1888-3

SD1888-03

PIN CONNECTION

DESCRIPTION

The SD1888-03 is a 28 V Class C silicon NPN

transistor designed for INMARSAT and other 1.65

GHz SATCOM applications. Agold metallized emit-

ter-ballasted die geometry is employed providing

high gain and efficiency while ensuring long term

reliability and ruggedness under severe operating

conditions. SD1888-03 is packaged in a cost-ef-

fective epoxy sealed housing

1. Collector

2. Emitter

3. Base

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

3.0

2.6

P_DISS

T_J

Power Dissipation

Junction Temperature

Storage Temperature

+200

T_STG

65 to +150

−

THERMAL DATA

R_TH(j-c)Junction-Case Thermal Resistance

3.5

°C/W

1/4

July 1993

12 3 4

中文翻译

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