是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-93 |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.30.00.80 |
风险等级: | 5.16 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最大直流栅极触发电流: | 65 mA |
JEDEC-95代码: | TO-209AB | JESD-30 代码: | O-MUPM-H3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
最大均方根通态电流: | 285 A | 断态重复峰值电压: | 1000 V |
重复峰值反向电压: | 1000 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
180RKI100M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 285A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
180RKI100M | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 285A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
180RKI100MPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 285A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
180RKI100MPBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 285A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
180RKI100PBF | VISHAY |
获取价格 |
Phase Control Thyristors (Stud Version), 180 A | |
180RKI100S90PBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 285A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A | |
180RKI20M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 285A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AB | |
180RKI20PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 285A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AB | |
180RKI40 | VISHAY |
获取价格 |
Phase Control Thyristors (Stud Version), 180 A | |
180RKI40 | INFINEON |
获取价格 |
PHASE CONTROL THYRISTORS |