15TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 15 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
Base
cathode
2
RoHS
• Extremely low reverse leakage
COMPLIANT
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
1
3
TO-220AC
Cathode
Anode
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
PRODUCT SUMMARY
IF(AV)
15 A
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
VR
100 V
VF at 15 A at 125 °C
0.67 V
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
VF
CHARACTERISTICS
VALUES
100
UNITS
V
15 Apk, TJ = 125 °C
Range
0.67
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
15TT100
UNITS
Maximum DC reverse voltage
TJ = 25 °C
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 144 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
15
Following any rated load
condition and with rated
5 µs sine or 3 µs rect. pulse
920
A
Maximum peak one cycle
non-repetitive surge current
IFSM
EAS
IAR
10 ms sine or 6 ms rect. pulse
240
36
V
RRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
TJ = 25 °C, IAS = 1.1 A, L = 60 mH
mJ
A
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
I
AS at
TJ max.
Document Number: 94560
Revision: 24-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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