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15TT100 PDF预览

15TT100

更新时间: 2024-11-05 06:18:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 114K
描述
High Performance Schottky Generation 5.0, 15 A

15TT100 数据手册

 浏览型号15TT100的Datasheet PDF文件第2页浏览型号15TT100的Datasheet PDF文件第3页浏览型号15TT100的Datasheet PDF文件第4页浏览型号15TT100的Datasheet PDF文件第5页浏览型号15TT100的Datasheet PDF文件第6页浏览型号15TT100的Datasheet PDF文件第7页 
15TT100  
Vishay High Power Products  
High Performance  
Schottky Generation 5.0, 15 A  
FEATURES  
• 175 °C high performance Schottky diode  
• Very low forward voltage drop  
Base  
cathode  
2
RoHS  
• Extremely low reverse leakage  
COMPLIANT  
• Optimized VF vs. IR trade off for high efficiency  
• Increased ruggedness for reverse avalanche capability  
• RBSOA available  
• Negligible switching losses  
1
3
TO-220AC  
Cathode  
Anode  
• Submicron trench technology  
• Full lead (Pb)-free and RoHS compliant devices  
• Designed and qualified for industrial level  
APPLICATIONS  
• High efficiency SMPS  
• Automotive  
PRODUCT SUMMARY  
IF(AV)  
15 A  
• High frequency switching  
• Output rectification  
• Reverse battery protection  
• Freewheeling  
VR  
100 V  
VF at 15 A at 125 °C  
0.67 V  
• Dc-to-dc systems  
• Increased power density systems  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
VF  
CHARACTERISTICS  
VALUES  
100  
UNITS  
V
15 Apk, TJ = 125 °C  
Range  
0.67  
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
15TT100  
UNITS  
Maximum DC reverse voltage  
TJ = 25 °C  
100  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 144 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
15  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
920  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
EAS  
IAR  
10 ms sine or 6 ms rect. pulse  
240  
36  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
TJ = 25 °C, IAS = 1.1 A, L = 60 mH  
mJ  
A
Limited by frequency of operation and time pulse duration so  
that TJ < TJ max. IAS at TJ max. as a function of time pulse  
See fig. 8  
I
AS at  
TJ max.  
Document Number: 94560  
Revision: 24-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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