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15SQ030

更新时间: 2024-11-29 14:52:59
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管
页数 文件大小 规格书
2页 1176K
描述
肖特基二极管

15SQ030 技术参数

Case Style:R-6IF(A):15
Maximum recurrent peak reverse voltage:30Peak forward surge current:275
Maximum instantaneous forward voltage:0.55@IF(A):15
Maximum reverse current:0.1TJ(℃):/
class:Diodes

15SQ030 数据手册

 浏览型号15SQ030的Datasheet PDF文件第2页 
15SQ030-15SQ100  
15A Schottky Barrier Diode  
R-6  
Features  
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Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Mechanical Data  
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Case: P-600, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
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Polarity: Cathode Band  
Weight: 2.1 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL 15SQ030 15SQ035 15SQ040 15SQ045 15SQ050 15SQ060 15SQ080 15SQ100  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
35  
24.5  
35  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward  
15  
I(AV)  
IFSM  
A
A
Rectified Current@Tc=95 ℃  
Peak Forward Surage Current 8.3ms single half  
sine-wave super imposed on rated load(JEDEC  
Method)  
275  
0.55  
0.7  
0.8  
Peak Forward Voltage at 10A DC(Note1)  
Maximum DC Reverse Current @Tj=25℃  
at Rated DC Bolcking Voltage @Tj=100℃  
Tyical Junction Capacitance (Note2)  
Tyical Thermal Resistance (Note3)  
Operating Temperature Range  
VF  
IR  
V
0.5  
50  
mA  
450  
3.0  
CJ  
R J  
TJ  
PF  
/w  
-55 to+200  
-55 to+200  
Storage Temperature Range  
TSTG  
NOTES:1.300us Pulse Width, 2%Dudy Cycle.  
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.  
3.Thermal Resistance Junction to Case.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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