Datasheet > 15SQ040

15SQ040

更新时间： 2024-11-29 14:52:59

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1176K
描述
肖特基二极管

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数据手册

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15SQ040 数据手册

15SQ030-15SQ100

15A Schottky Barrier Diode

R-6

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: P-600, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 2.1 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SYMBOL 15SQ030 15SQ035 15SQ040 15SQ045 15SQ050 15SQ060 15SQ080 15SQ100

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

VRRM

VRMS

VDC

24.5

31.5

100

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward

I(AV)

IFSM

Rectified Current@Tc=95 ℃

Peak Forward Surage Current 8.3ms single half

sine-wave super imposed on rated load(JEDEC

Method)

275

0.55

0.7

0.8

Peak Forward Voltage at 10A DC(Note1)

Maximum DC Reverse Current @Tj=25℃

at Rated DC Bolcking Voltage @Tj=100℃

Tyical Junction Capacitance (Note2)

Tyical Thermal Resistance (Note3)

Operating Temperature Range

0.5

450

3.0

R J

℃/w

℃

-55 to+200

Storage Temperature Range

TSTG

℃

NOTES:1.300us Pulse Width, 2%Dudy Cycle.

2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.

3.Thermal Resistance Junction to Case.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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