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15KPA170CAB PDF预览

15KPA170CAB

更新时间： 2024-11-01 18:18:19
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管电视
页数 文件大小 规格书
6页 909K
描述
15000W, BIDIRECTIONAL, SILICON, TVS DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, P600, 2 PIN

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中文翻译

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15KPA170CAB 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：compliant
风险等级：5.45其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：207.9 V最小击穿电压：189.9 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：2最大非重复峰值反向功率耗散：15000 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL最大功率耗散：8 W
认证状态：Not Qualified最大重复峰值反向电压：170 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

15KPA170CAB 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 15000W > 15KPA series  
RoHS  
15KPA Series  
Description  
The 15KPA Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Uni-directional  
Features  
Bi-directional  
• VBR @TJ= VBR@25°C × (1+αT • ESD protection of data  
lines in accordance with  
IEC 61000-4-2 (IEC801-2)  
x (TJ - 25))  
(αT:Temperature Coefficient)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4 (IEC801-4)  
• Low incremental surge  
resistance  
• Glass passivated chip  
junction in P600 package  
Agency Approvals  
• 15000W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
AGENCY  
AGENCY FILE NUMBER  
E128662/E230531  
• Typical IR less than 2μA  
above 36V  
• High temperature  
soldering guaranteed:  
260°C/40 seconds /  
0.375”, (9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• Plastic package has  
underwriters laboratory  
flammability classification  
94V-O  
Maximum Ratings andThermal Characteristics  
(TA=25°C unless otherwise noted)  
• Excellent clamping  
capability  
Parameter  
Symbol  
PPPM  
Value  
Unit  
W
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
15000  
Steady State Power Dissipation on  
Inifinite Heat Sink atTL=75ºC (Fig. 6)  
PD  
8.0  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
IFSM  
400  
15kV(Air), 8kV (Contact)  
Operating Junction and Storage  
Temperature Range  
-55  
to150  
TJ, TSTG  
RuJL  
°C  
TypicalThermal Resistance Junction  
to Lead  
Applications  
8.0  
40  
°C/W  
°C/W  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
TypicalThermal Resistance Junction  
to Ambient  
RuJA  
V
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTA = 25°C per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
Additional Information  
Functional Diagram  
Datasheet  
Resources  
Samples  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2014 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 01/24/14  
123456

中文翻译

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