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15KP60A-5AE3 PDF预览

15KP60A-5AE3

更新时间: 2024-11-02 03:41:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
2页 84K
描述
Trans Voltage Suppressor Diode, 15000W, 60V V(RWM), Unidirectional, 1 Element, Silicon,

15KP60A-5AE3 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.57
最大击穿电压:73.7 V最小击穿电压:66.7 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2最大非重复峰值反向功率耗散:15000 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:7 W最大重复峰值反向电压:60 V
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL

15KP60A-5AE3 数据手册

 浏览型号15KP60A-5AE3的Datasheet PDF文件第2页 

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