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15GN03NA PDF预览

15GN03NA

更新时间: 2024-11-11 06:24:23
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管
页数 文件大小 规格书
6页 51K
描述
VHF High-frequency Amplifier Applications

15GN03NA 技术参数

生命周期:Obsolete包装说明:NP, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.68Is Samacsys:N
最大集电极电流 (IC):0.07 A基于收集器的最大容量:1.4 pF
集电极-发射极最大电压:10 V配置:SINGLE
最小直流电流增益 (hFE):100最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1500 MHzBase Number Matches:1

15GN03NA 数据手册

 浏览型号15GN03NA的Datasheet PDF文件第2页浏览型号15GN03NA的Datasheet PDF文件第3页浏览型号15GN03NA的Datasheet PDF文件第4页浏览型号15GN03NA的Datasheet PDF文件第5页浏览型号15GN03NA的Datasheet PDF文件第6页 
Ordering number : ENA1110  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
15GN03NA  
VHF High-frequency Amplifier Applications  
Applications  
VHF, RF, MIXER, OSC, IF amplifier.  
Features  
High cutoff frequency : f =1.5GHz typ.  
High gain  
T
: S21e2=11.5dB typ (f=0.4GHz).  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
20  
10  
CBO  
CEO  
EBO  
V
3
V
I
70  
mA  
mW  
°C  
°C  
C
Collector Dissipation  
P
400  
150  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
0.1  
1
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
I
V
V
V
V
V
V
=10V, I =0A  
μA  
μA  
CBO  
CB  
EB  
CE  
CE  
CB  
CB  
E
=2V, I =0A  
EBO  
C
h
=5V, I =10mA  
100  
1.0  
180  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : ZC  
f
=5V, I =20mA  
C
1.5  
1.1  
0.7  
GHz  
pF  
T
Cob  
Cre  
=10V, f=1MHz  
=10V, f=1MHz  
1.4  
pF  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
42809AB MS IM TC-00001956  
No. A1110-1/6  

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