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14KESD30CAE3TR PDF预览

14KESD30CAE3TR

更新时间: 2024-11-22 14:31:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 158K
描述
Trans Voltage Suppressor Diode, 4000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-41, 2 PIN

14KESD30CAE3TR 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79Is Samacsys:N
最小击穿电压:33.3 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-LALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:4000 W元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1.5 W认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

14KESD30CAE3TR 数据手册

 浏览型号14KESD30CAE3TR的Datasheet PDF文件第2页浏览型号14KESD30CAE3TR的Datasheet PDF文件第3页浏览型号14KESD30CAE3TR的Datasheet PDF文件第4页 
14KESD5.0 thru 14KESD170CA, e3  
AXIAL-LEAD TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These small axial-leaded TVS devices feature the ability to clamp  
dangerous high voltage, short-term transients such as produced by directed  
or radiated electrostatic discharge phenomena before entering sensitive  
component regions of a circuit design. They are small economical transient  
voltage suppressors targeted primarily for short-term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as illustrated in Figure #1.  
DO-41  
(DO-204AL)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Excellent protection in clamping direct ESD level  
transients in excess of 40,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Absorbs ESD level transients* of 14,000 Watts per MIL-  
STD-750, Method 1020 (approximately 150 ns  
exponential wave, or one microsecond transients up to  
4000 watts. See Figure #1 and #2 for overall transient  
Peak Pulse Power.  
Minimal capacitance (See Figure #3)  
Flexible axial-lead mounting terminals  
Bidirectional features available by adding a “C” or  
“CA” suffix  
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5V to 170V  
Hermetic DO-41 Package. Also available in surface  
mount DO-213AB MELF package (see separate data  
sheet)  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
4000 Watts for One Microsecond Square Wave or  
14,000 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
CASE: Hermetically sealed axial-lead glass DO-41  
(DO-204AL) package  
FINISH: Tin-lead or RoHS compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
POLARITY: Banded end is cathode  
WEIGHT: 0.378 grams (typical)  
MARKING: Part number  
THERMAL RESISTANCE: Less than 83oC/Watt  
junction to lead at 0.375 inches from body.  
DC power dissipation 1500 mW at TL = 75oC at 3/8  
inch (10 mm) lead length from body.  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
Derate at 22.8 W/oC above 25oC for PPP (1μs) and  
See package dimension on last page  
at 15 mW/oC above 75oC for dc power.  
Forward Surge Current 500 amps for 1μs at TL =  
25oC (rise time > 100 ns).  
Copyright © 2006  
3-29-2006 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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