5秒后页面跳转
捷配首页

Datasheet > 14KESD30CE3
14KESD30CE3 PDF预览

14KESD30CE3

更新时间： 2024-11-22 14:31:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 168K
描述
Trans Voltage Suppressor Diode, 4000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-41, 2 PIN

阅读下载

中文翻译

获取价格

14KESD30CE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-41包装说明：O-LALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.79最小击穿电压：33.3 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-204ALJESD-30 代码：O-LALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：4000 W
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：1.5 W
认证状态：Not Qualified最大重复峰值反向电压：30 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

14KESD30CE3 数据手册

 浏览型号14KESD30CE3的Datasheet PDF文件第2页浏览型号14KESD30CE3的Datasheet PDF文件第3页浏览型号14KESD30CE3的Datasheet PDF文件第4页 
14KESD5.0 thru 14KESD170CA, e3  
AXIAL-LEAD TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These small axial-leaded TVS devices feature the ability to clamp  
dangerous high voltage, short-term transients such as produced by directed  
or radiated electrostatic discharge phenomena before entering sensitive  
component regions of a circuit design. They are small economical transient  
voltage suppressors targeted primarily for short-term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as illustrated in Figure #1.  
DO-41  
(DO-204AL)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Excellent protection in clamping direct ESD level  
transients in excess of 40,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
•
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Absorbs ESD level transients* of 14,000 Watts per MIL-  
STD-750, Method 1020 (approximately 150 ns  
exponential wave, or one microsecond transients up to  
4000 watts. See Figure #1 and #2 for overall transient  
Peak Pulse Power.  
•
•
•
Minimal capacitance (See Figure #3)  
Flexible axial-lead mounting terminals  
Bidirectional features available by adding a “C” or  
“CA” suffix  
•
•
•
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5V to 170V  
Hermetic DO-41 Package. Also available in surface  
mount DO-213AB MELF package (see separate data  
sheet)  
•
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
4000 Watts for One Microsecond Square Wave or  
14,000 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
•
CASE: Hermetically sealed axial-lead glass DO-41  
(DO-204AL) package  
•
FINISH: Tin-lead or RoHS compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
•
•
•
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
•
•
•
•
POLARITY: Banded end is cathode  
WEIGHT: 0.378 grams (typical)  
MARKING: Part number  
THERMAL RESISTANCE: Less than 83oC/Watt  
junction to lead at 0.375 inches from body.  
•
•
•
DC power dissipation 1500 mW at TL = 75oC at 3/8  
inch (10 mm) lead length from body.  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
Derate at 22.8 W/oC above 25oC for PPP (1μs) and  
•
See package dimension on last page  
at 15 mW/oC above 75oC for dc power.  
Forward Surge Current 500 amps for 1μs at TL =  
25oC (rise time > 100 ns).  
Copyright © 2007  
6-8-2007 REV C  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

下载PDF

与14KESD30CE3相关器件

型号 品牌 获取价格 描述 数据表
14KESD30CE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 4000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
14KESD30CTRE3 MICROSEMI

获取价格

 		Transient Suppressor,
14KESD30E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 4000W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-
14KESD30E3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 4000W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-
14KESD33 MICROSEMI

获取价格

 		AXIAL LEAD
14KESD33A MICROSEMI

获取价格

 		AXIAL LEAD
14KESD33AE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 4000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
14KESD33ATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 4000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
14KESD33ATRE3 MICROSEMI

获取价格

 		Transient Suppressor,
14KESD33CAE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 4000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

与14KESD30CE3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证