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132GH120-212CTVF PDF预览

132GH120-212CTVF

更新时间: 2024-02-03 08:13:04
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON
页数 文件大小 规格书
1页 14K
描述
Insulated Gate Bipolar Transistor,

132GH120-212CTVF 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.73
Base Number Matches:1

132GH120-212CTVF 数据手册

  
SKiiP 132 GH 120 - 212 CTV  
Absolute Maximum Ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
Symbol Conditions1)  
Values  
3000  
Units  
V
4)  
Visol  
AC, 1min  
single phase bridge  
SKiiP  
Top ,Tstg  
Operating / stor. temperature  
-25...+85  
°C  
132 GH 120 - 212 CTV 7,9)  
IGBT and Inverse Diode  
VCES  
1200  
900  
150  
V
V
A
°C  
A
Preliminary Data  
Case S2  
5)  
VCC  
IC  
Tj  
Operating DC link voltage  
IGBT  
IGBT + Diode  
Diode  
3)  
-40...+150  
150  
IF  
IFM  
IFSM  
Diode, tp < 1 ms  
Diode, Tj = 150 °C, 10ms; sin  
300  
1440  
10  
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Driver  
kAs2  
VS1  
VS2  
fsmax  
dV/dt  
Stabilized Power Supply  
Non-stabilized Power Supply  
Switching frequency  
18  
30  
20  
75  
V
V
kHz  
kV/µs  
Primary to secondary side  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
Features  
IGBT11)  
V(BR)CES  
Short circuit protection, due to  
evaluation of current sensor  
signals  
Driver without supply  
V
mA  
mA  
VCES  
10  
0,4  
ICES  
VGE = 0,  
Tj = 25 °C  
Tj = 125 °C  
VCE = VCES  
Isolated power supply  
Low thermal impedance  
Optimal thermal management  
with integrated heatsink  
Pressure contact technology  
with increased power cycling  
capability, compact design  
Low stray inductance  
High power, small losses  
Over-temperature protection  
VTO  
rT  
VCesat  
VCesat  
Tj = 125 °C  
Tj = 125 °C  
IC = 125A,  
IC = 125A,  
1,38  
14,7  
3,2  
3,05  
45/73  
V
mΩ  
V
V
mJ  
Tj = 125 °C  
Tj = 25 °C  
Eon + Eoff VCC=600/900V,IC=150A  
Tj = 125 °C  
CCHC  
LCE  
per SkiiP, AC side  
Top, Bottom  
1,4  
15  
nF  
nH  
Inverse Diode 2)  
1)  
Theatsink = 25 °C, unless  
VF = VEC IF= 125A;  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
2,38  
2,55  
6
V
V
mJ  
V
0,91  
5,7  
otherwise specified  
CAL = Controlled Axial Lifetime  
VF= VEC  
IF= 125A;  
2)  
Eon + Eoff IF= 150A;  
Technology (soft and fast)  
without driver  
Driver input to DC link/ AC  
3)  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
4)  
mΩ  
output to heatsink  
with Semikron-DC link (low  
inductance)  
other heatsinks on request  
C - Integrated current sensors  
T - Temperature protection  
V - 15 V or 24 V power supply  
options available for driver:  
Thermal Characteristics  
10)  
5)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per Diode  
P16 heatsink; see case S2  
0,180  
0,375  
0,044  
°C/W  
°C/W  
°C/W  
10)  
6)  
6,10)  
7)  
Driver  
IS1  
IS2  
Supply current 15V-supply  
Supply current 24V-supply  
Interlock-time  
230+150*fs /fsmax+2,5*IAC/A  
250+130*fs /fsmax+1,9*IAC/A  
2,3  
mA  
mA  
µs  
9)  
tinterlock-driver  
U - DC link voltage sense  
F – Fiber optic connector  
s” referenced to temperature  
sensor  
NPT-technology with homo-  
genous current-distribution  
SKiiPPACK protection  
10)  
ITRIPSC  
ITRIPLG  
TTRIP  
Short circuit protection  
A
A
°C  
V
188 ± 2%  
43 +/- 2%  
115 ± 5%  
920 ± 2%  
Ground fault protection  
Over-temp. protection  
UDC-protection  
11)  
9)  
UDCTRIP  
Mechanical Data  
M1  
DC terminals, SI Units  
4
8
6
10  
Nm  
Nm  
M2  
AC terminals, SI Units  
28.01.99  
by SEMIKRON  

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