12FL80S10

更新时间： 2024-11-05 02:53:27

品牌	Logo	应用领域
TRSYS		整流二极管快速恢复二极管
页数	文件大小	规格书
1页	170K
描述
Fast Recovery Rectifier

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

12FL80S10 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.76	Is Samacsys：	N
Base Number Matches：	1

12FL80S10 数据手册

12FL Series

Fast Recovery Rectifier

V_RRM= 50-1000V, I_F(AV)= 12Amp,VF = 1.4V

Symbol

Cathode to Stud Shown

(Anode to Stud add Suffix R)

(Tj = 25 C unless stated otherwise)

MAXIMUM RATINGS

Parameter

12FL5S02 12FL10S02 12FL20S02 12FL40S02 12FL60S02

12FL100S05

12FL80S05

12FL80S10

12FL40S10 12FL60S10

12FL5S05 12FL10S05 12FL20S05 12FL40S05 12FL60S05

Unit

Symbol

V_RRM

12FL100S1

12FL5S10 12FL10S10

12FL20S10

100

200

400

12.0

600

800

1000

Repetitive Peak Reverse Voltage

Maximum Average On-State Current

Peak Forward Surge Current 8.3mS

Volt

Amp

I_F

(AV)

I_FSM

150

A /S

Maximum I T for Fusing 8.3ms

I T

-65 to +175

-65 to +150

T_(STG)

Maximum Storage Temperature Range

Maximum Junction Temperature Range

ELECTRICAL CHARACTERISICS at

Parameter

Tj = 25 C Maximum. Unless stated Otherwise

Value

Typ

Condition

Symbol

Unit

Max

1.4

Min

I_FM=12 Amps

V_FM

Maximum Forward Voltage

Repetitive Peak Off- State Current

Volt

µA

I_DRM

V_R= V_RRM

Reverse Recovery Time for S02

Reverse Recovery Time for S05

Reverse Recovery Time for S10

Thermal Resistance (Junction to Case)

t_RR

100

250

430

2.0

R_TH

C/W

(J-c)

Mounting Torque

Weight

M_T

1.2

7.0

grms

DIMENSIONS

Millimetres

Inches

Dim

Min

Max

12.82

0.065

0.437 10.77 11.20

Min

Max

0.505

1.65

0.020

0.424

0.51

0.310

0.413

7.87

10.49

2.54

0.060 0.100 1.53

0.075 0.175 1.91

10 -32 UNF3A

0.600 0.820 15.24 20.82

0.422 0.453 10.72 11.50

4.44

Polarity Symbol

0.405

10.29

MetalCase

DO-4

中文翻译

下载PDF

与12FL80S10相关器件

型号	品牌	获取价格	描述	数据表
12FL80S10M	INFINEON	获取价格	暂无描述
12FL80S10PBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
12FLH-RSM1-TB	JST	获取价格	薄，封装高度仅为1.2mm，还适用于0.3mm厚的FPC。单排表面封装*外壳由耐热树脂
12FLH-SM1-TB	JST	获取价格	薄，封装高度仅为1.2mm，还适用于0.3mm厚的FPC。单排表面封装*外壳由耐热树脂
12FLR100MS02	INFINEON	获取价格	FAST RECOVERY DIODES
12FLR100MS02	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT,
12FLR100MS02	NJSEMI	获取价格	Diode Switching 1KV 12A 2-Pin DO-4
12FLR100MS02PBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
12FLR100MS05	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT,
12FLR100MS05PBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN