12CWQ03FNTRPBF

更新时间： 2024-11-15 07:26:07

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	140K
描述
Schottky Rectifier, 2 x 6 A

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

12CWQ03FNTRPBF 数据手册

VS-12CWQ03FNPbF

Vishay Semiconductors

Schottky Rectifier, 2 x 6 A

FEATURES

• Popular D-PAK outline

Base

common

cathode

• Center tap configuration

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

Common

cathode

• Guard ring for enhanced ruggedness and long term

reliability

D-PAK (TO-252AA)

Anode

• Compliant to RoHS Directive 2002/95/EC

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

PRODUCT SUMMARY

Package

D-PAK (TO-252AA)

2 x 6 A

DESCRIPTION

I_F(AV)

The VS-12CWQ03FNPbF surface mount, center tap,

Schottky rectifier series has been designed for applications

requiring low forward drop and small foot prints on PC

board. Typical applications are in disk drives, switching

power supplies, converters, freewheeling diodes, battery

charging, and reverse battery protection.

V_R

30 V

V_Fat I_F

I_RM

0.37 V

58 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Common cathode

10 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

t_p= 5 μs sine

320

V_F

6 Apk, T_J= 125 °C (per leg)

Range

0.37

T_J

- 55 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-12CWQ03FNPbF

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average

forward current

See fig. 5

per leg

I_F(AV)

50 % duty cycle at T_C= 135 °C, rectangular waveform

per device

Maximum peak one cycle

non-repetitive surge current per leg

See fig. 7

Following any rated

load condition and with

rated V_RRMapplied

5 μs sine or 3 μs rect. pulse

320

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 2.0 A, L = 5 mH

130

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

2.0

Document Number: 94132

Revision: 14-Jan-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6 7

中文翻译

下载PDF

12CWQ03FNTRPBF 替代型号

型号	品牌	替代类型	描述	数据表
STPS15L30CB-TR	STMICROELECTRONICS	功能相似	LOW DROP POWER SCHOTTKY RECTIFIER

与12CWQ03FNTRPBF相关器件

型号	品牌	获取价格	描述	数据表
12CWQ03FNTRR	INFINEON	获取价格	SCHOTTKY RECTIFIER 12 Amp
12CWQ03FNTRRPBF	INFINEON	获取价格	SCHOTTKY RECTIFIER 12 Amp
12CWQ03FNTRRPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 6 A
12CWQ04FN	INFINEON	获取价格	SCHOTTKY RECTIFIER
12CWQ04FN	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 40V V(RRM), Silicon, TO-252AA, SIMILAR
12CWQ04FN-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, Silicon, TO-252AA, SIMILAR TO TO-252AA,
12CWQ04FN-M3	VISHAY	获取价格	Schottky Rectifier, 2 x 6 A
12CWQ04FN-M3_12	VISHAY	获取价格	Schottky Rectifier, 2 x 6 A
12CWQ04FNPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 6 A
12CWQ04FNPBF	INFINEON	获取价格	SCHOTTKY RECTIFIER

与12CWQ03FNTRPBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

7
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

12CWQ03FNTRPBF

12CWQ03FNTRPBF 数据手册

12CWQ03FNTRPBF 替代型号

与12CWQ03FNTRPBF相关器件

与12CWQ03FNTRPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

12CWQ03FNTRPBF

12CWQ03FNTRPBF 数据手册

12CWQ03FNTRPBF 替代型号

与12CWQ03FNTRPBF相关器件

与12CWQ03FNTRPBF相关文章

您还可以找

您在本页遇到什么问题？