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12CWQ04FN-M3_12 PDF预览

12CWQ04FN-M3_12

更新时间: 2024-11-15 12:20:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 144K
描述
Schottky Rectifier, 2 x 6 A

12CWQ04FN-M3_12 数据手册

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VS-12CWQ04FN-M3  
Vishay Semiconductors  
Schottky Rectifier, 2 x 6 A  
FEATURES  
• Low forward voltage drop  
Base  
common  
cathode  
4
• Guard ring for enhanced ruggedness and long  
term reliability  
• Halogen-free according to IEC 61249-2-21  
definition  
2
• Popular D-PAK outline  
Common  
cathode  
D-PAK (TO-252AA)  
• Center tap configuration  
• Small foot print, surface mountable  
• High frequency operation  
1
3
Anode  
Anode  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
D-PAK (TO-252AA)  
2 x 6 A  
• Compliant to RoHS Directive 2002/95/EC  
IF(AV)  
VR  
40 V  
DESCRIPTION  
VF at IF  
IRM  
0.48 V  
The VS-12CWQ04FN-M3 surface mount, center tap,  
Schottky rectifier series has been designed for applications  
requiring low forward drop and small foot prints on PC  
board. Typical applications are in disk drives, switching  
power supplies, converters, freewheeling diodes, battery  
charging, and reverse battery protection.  
40 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
9 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
12  
UNITS  
Rectangular waveform  
A
V
40  
tp = 5 μs sine  
550  
A
VF  
6 Apk, TJ = 125 °C (per leg)  
Range  
0.48  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-12CWQ04FN-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
6
IF(AV)  
50 % duty cycle at TC = 134 °C, rectangular waveform  
A
per device  
12  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
550  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.5 A, L = 8 mH  
90  
9
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.2  
Document Number: 93286  
Revision: 03-Nov-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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