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11LC161T-IMNY PDF预览

11LC161T-IMNY

更新时间: 2024-10-28 06:25:43
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
44页 801K
描述
1K-16K UNI/O® Serial EEPROM Family Data Sheet

11LC161T-IMNY 数据手册

 浏览型号11LC161T-IMNY的Datasheet PDF文件第2页浏览型号11LC161T-IMNY的Datasheet PDF文件第3页浏览型号11LC161T-IMNY的Datasheet PDF文件第4页浏览型号11LC161T-IMNY的Datasheet PDF文件第5页浏览型号11LC161T-IMNY的Datasheet PDF文件第6页浏览型号11LC161T-IMNY的Datasheet PDF文件第7页 
11AA010/11LC010  
11AA020/11LC020  
11AA040/11LC040  
11AA080/11LC080  
11AA160/11LC160  
11AA161/11LC161  
1K-16K UNI/O® Serial EEPROM Family Data Sheet  
Features:  
Description:  
• Single I/O, UNI/O® Serial Interface Bus  
• Low-Power CMOS Technology:  
The Microchip Technology Inc. 11AAXXX/11LCXXX  
(11XX*) devices are a family of 1 Kbit through 16 Kbit  
Serial Electrically Erasable PROMs. The devices are  
organized in blocks of x8-bit memory and support the  
patented** single I/O UNI/O® serial bus. By using  
Manchester encoding techniques, the clock and data  
are combined into a single, serial bit stream (SCIO),  
where the clock signal is extracted by the receiver to  
correctly decode the timing and value of each bit.  
- 1 mA active current, typical  
- 1 µA standby current (max.) (I-temp)  
• 128 x 8 through 2,048 x 8 Bit Organizations  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kbps Max. Bit Rate – Equivalent to 100 kHz  
Clock Frequency  
Low-voltage design permits operation down to 1.8V (for  
11AAXXX devices), with standby and active currents of  
only 1 uA and 1 mA, respectively.  
• Self-Timed Write Cycle (including Auto-Erase)  
• Page-Write Buffer for up to 16 Bytes  
• STATUS Register for Added Control:  
- Write enable latch bit  
The 11XX family is available in standard packages  
including 8-lead PDIP and SOIC, and advanced pack-  
aging including 3-lead SOT-23, 3-lead TO-92, 4-lead  
Chip Scale, 8-lead TDFN, and 8-lead MSOP.  
- Write-In-Progress bit  
• Block Write Protection:  
- Protect none, 1/4, 1/2 or all of array  
• Built-in Write Protection:  
Package Types (not to scale)  
MSOP  
(MS)  
PDIP/SOIC  
(P, SN)  
- Power-on/off data protection circuitry  
- Write enable latch  
NC  
NC  
NC  
Vss  
1
2
3
4
8
7
6
5
VCC  
NC  
• High Reliability:  
1
2
3
4
8
7
6
5
NC  
NC  
NC  
VCC  
NC  
- Endurance: 1,000,000 erase/write cycles  
- Data retention: > 200 years  
NC  
NC  
SCIO  
V
SS  
SCIO  
- ESD protection: > 4,000V  
• 3-lead SOT-23 and TO-92 Packages  
• 4-lead Chip Scale Package  
SOT23  
(TT)  
TDFN  
(MN)  
• 8-lead PDIP, SOIC, MSOP, TDFN Packages  
• Pb-Free and RoHS Compliant  
• Available Temperature Ranges:  
1
2
3
4
NC  
8
7
6
5
VCC  
NC  
VCC  
SCIO  
(1)  
2
1
NC  
NC  
VSS  
3
NC  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
VSS  
SCIO  
CS (Chip Scale)  
TO-92  
(TO)  
Pin Function Table  
VCC  
2
1
VSS  
Name  
Function  
SCIO  
VSS  
Serial Clock, Data Input/Output  
Ground  
4
SCIO  
3
NC  
Vss  
(Top down view,  
balls not visible  
Vcc  
VCC  
Supply Voltage  
)
SCIO  
Note 1: Available in I-temp, “AA” only.  
* 11XX is used in this document as a generic part number for the 11 series devices.  
®
** Microchip’s UNI/O Bus products are covered by the following patent issued in the U.S.A.: 7,376,020.  
2010 Microchip Technology Inc.  
Preliminary  
DS22067H-page 1  

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