11DQ05TR

更新时间： 2024-11-05 06:25:35

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	82K
描述
Schottky Rectifier, 1.1 A

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11DQ05TR 数据手册

11DQ05, 11DQ06

Vishay High Power Products

Schottky Rectifier, 1.1 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

• Very low forward voltage drop

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

Cathode

Anode

• Guard ring for enhanced ruggedness and long term

reliability

DO-204AL

• Lead (Pb)-free plating

• Designed and qualified for industrial level

DESCRIPTION

PRODUCT SUMMARY

The 11DQ.. axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

I_F(AV)

1.1 A

50/60 V

V_R

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

1.1

UNITS

Rectangular waveform

50/60

t_p= 5 µs sine

1 Apk, T_J= 125 °C

Range

150

V_F

0.53

T_J

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

11DQ05

11DQ06

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

I_F(AV)

50 % duty cycle at T_C= 84 °C, rectangular waveform

1.1

Maximum peak one cycle

non-repetitive surge current

See fig. 6

Following any rated load

condition and with rated

5 µs sine or 3 µs rect. pulse

150

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 1 A, L = 4 mH

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

2.0

Current decaying linearly to zero in 1 µs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

1.0

Document Number: 93206

Revision: 06-Nov-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

12 3 4 5

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