A1120, A1121, A1122
and A1125
Chopper Stabilized Precision Hall Effect Switches
Functional Description
give an indeterminate output state. The correct state is attained
Operation
after the first excursion beyond BOP or BRP
.
The output of the A1120, A1121, and A1122 devices switches
low (turns on) when a magnetic field perpendicular to the Hall
element exceeds the operate point threshold, BOP (see panel A of
figure 1). When the magnetic field is reduced below the release
point, BRP, the device output goes high (turns off). The output
of the A1125 devices switches high (turns off) when a magnetic
field perpendicular to the Hall element exceeds the operate point
threshold, BOP (see panel B of figure 1). When the magnetic field
is reduced below the release point, BRP, the device output goes
low (turns on).
Applications
It is strongly recommended that an external bypass capacitor be
connected (in close proximity to the Hall element) between the
supply and ground of the device to reduce external noise in the
application. As is shown in panel B of figure 1, a 0.1 μF capacitor
is typical.
Extensive applications information for Hall effect devicers is
available in:
After turn-on, the output voltage is VOUT(SAT). The output tran-
sistor is capable of sinking current up to the short circuit current
limit, IOM, which is a minimum of 30 mA.
• Hall-Effect IC Applications Guide, Application Note 27701
• Guidelines for Designing Subassemblies Using Hall-Effect
Devices, Application Note 27703.1
The difference in the magnetic operate and release points is the
hysteresis, BHYS, of the device. This built-in hysteresis allows
clean switching of the output even in the presence of external
mechanical vibration and electrical noise. Powering-on the device
in the hysteresis range (less than BOP and higher than BRP) will
• Soldering Methods for Allegro’s Products – SMT and Through-
Hole, Application Note 26009
All are provided in Allegro Electronic Data Book, AMS-702, and
the Allegro Web site, www.allegromicro.com.
VS
V+
V+
VCC
VCC
VCC
RL
A112x
VOUT
Output
CBYP
0.1 μF
VOUT(SAT)
VOUT(SAT)
B+
GND
0
0
B+
0
0
BHYS
(A)
BHYS
(B)
(C)
Figure 1. Device switching behavior. In panels A and B, on the horizontal axis, the B+ direction indicates increasing south polarity magnetic field strength.
This behavior can be exhibited when using an electrical circuit such as that shown in panel C.
Allegro MicroSystems, Inc.
115 Northeast Cutoff
10
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com